Qimonda

About: Qimonda is a based out in . It is known for research contribution in the topics: Integrated circuit & Semiconductor memory. The organization has 1807 authors who have published 2043 publications receiving 19224 citations. The organization is also known as: Qimonda AG.

Ferroelectricity in Simple Binary ZrO2 and HfO2

Abstract: The transition metal oxides ZrO2 and HfO2 as well as their solid solution are widely researched and, like most binary oxides, are expected to exhibit centrosymmetric crystal structure and therewith linear dielectric characteristics. For this reason, those oxides, even though successfully introduced into microelectronics, were never considered to be more than simple dielectrics possessing limited functionality. Here we report the discovery of a field-driven ferroelectric phase transition in pure, sub 10 nm ZrO2 thin films and a composition- and temperature-dependent transition to a stable ferroelectric phase in the HfO2–ZrO2 mixed oxide. These unusual findings are attributed to a size-driven tetragonal to orthorhombic phase transition that in thin films, similar to the anticipated tetragonal to monoclinic transition, is lowered to room temperature. A structural investigation revealed the orthorhombic phase to be of space group Pbc21, whose noncentrosymmetric nature is deemed responsible for the spontaneous...

Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory

Abstract: We discuss novel multi-level write algorithms for phase change memory which produce highly optimized resistance distributions in a minimum number of program cycles. Using a novel integration scheme, a test array at 4 bits/cell and a 32 kb memory page at 2 bits/cell are experimentally demonstrated.

Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts

Abstract: Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-silicide source and drain segments along the NW. The transistors with 10−30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 MA/cm2, and exhibited on/off current ratios of up to 107. The on-currents were limited and kept constant by the Schottky contacts for gate lengths below 1 μm, and decreased exponentially for gate lengths exceeding 1 μm.

Phase change memory cell with high read margin at low power operation

Abstract: A memory cell device includes a first electrode, phase-change material adjacent the first electrode, a second electrode adjacent the phase-change material, a diffusion barrier adjacent the phase-change material, and isolation material adjacent the diffusion barrier for thermally isolating the phase-change material. The diffusion barrier prevents diffusion of the phase-change material into the isolation material.