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Defect isolation using scan-path testing and electron beam probing in multi-level high density asics

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TLDR
A successful method of defect isolation using scan-path testing in conjunction with electron beam probing for isolating various defects on devices with multi-layer (3+) metallization, 500 K usable gates and 2000 scan elements is presented.
Abstract
A method and apparatus for isolating faults in an integrated circuit reduces time and effort to precisely locate such faults. A fault dictionary is developed, which is a record of the errors a circuit's modeled faults are expected to cause. The fault dictionary need only be generated once, and can be recalled for later testing of the same design. A failing circuit is subjected to test vectors and the erroneous outputs are logged, and then all failing scan test vectors are mapped into simulation scan patterns. Faults in the circuit are localized to a more narrowly defined area in which faults in the circuit may occur. If the area, even after localization, is too large, additional test patterns are developed and the device is subjected to another round of tests. The redefinition of test patterns is repeated until possible fault locations are sufficiently localized. The device is then probed to precisely locate the fault(s).

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References
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Test generation by environment emulation

TL;DR: In this article, a test vector pattern may be generated by an emulation of the intended operating environment of the logic circuit, which is used for device testing by comparing its outputs to those of a logic circuit and injecting selected faults to aid in device debug.
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