Patent
Diamond coatings on reactor wall and method of manufacturing thereof
Reads0
Chats0
TLDR
A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a diamond containing surface and process for manufacture thereof as mentioned in this paper, which is called a diamond-containing surface.Abstract:
A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a diamond containing surface and process for manufacture thereof.read more
Citations
More filters
Patent
Substrate Processing Apparatus
TL;DR: In this article, a bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the booster pump to prevent the exhaust gas from diffusing back to the inside of a process chamber.
Patent
Manufacturing method of semiconductor device and substrate processing apparatus
TL;DR: In this paper, the authors present a manufacturing method of a semiconductor device and a substrate processing apparatus, which includes loading a plurality of substrates into a reaction vessel, which is configured by a process tube and a manifold that supports the process tube, and arranging the loaded substrates within the reaction vessel.
Patent
Process feed management for semiconductor substrate processing
Fred Pettinger,Carl White,Dave Marquardt,Sokol Ibrani,Eric Shero,Todd Dunn,Kyle Fondurulia,Mike Halpin +7 more
TL;DR: In this paper, a gas channel plate for a semiconductor process module is described, which includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps.
Patent
Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
TL;DR: In this paper, a mounted chamber holding a semiconductor wafer and having members for work-processing the substrate under any of heating, plasma and process gas or a combination of them.
Patent
Semiconductor processing system and methods using capacitively coupled plasma
Jang-Gyoo Yang,Matthew L. Miller,Xinglong Chen,Kien N. Chuc,Qiwei Liang,Shankar Venkataraman,Dmitry Lubomirsky +6 more
TL;DR: In this paper, a capacitively coupled plasma (CCP) unit is described inside a process chamber, and a pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
References
More filters
Patent
Method and apparatus for producing magnetically-coupled planar plasma
TL;DR: In this article, an apparatus for producing a planar plasma in a low pressure process gas includes a chamber and an external planar coil, which is used for plasma treatment of a variety of planar articles.
Patent
Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
TL;DR: In this article, the substrate support is removed from a vaccum processing chamber and a modular mounting arrangement is used to support the removal of the support in the interior of the chamber at a position located inwardly of an inner sidewall.
Patent
Method and apparatus for protection of conductive surfaces in a plasma processing reactor
TL;DR: In this article, an apparatus and method for protecting conductive, typically metallic, walls of a plasma process chamber from accumulation of contaminants thereon and from reaction with a gas plasma and either deposition-gas plasma by-products is presented.
Patent
Adjustable electrode plasma processing chamber
TL;DR: In this paper, a plasma processing chamber incorporating parallel plate electrodes whose separation may be mechanically adjusted from the outside thereof is described, where the body includes an aperture to receive a planar surfaced terminal end of the housing.
Patent
Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer
TL;DR: A plasma processing chamber includes a substrate holder and a gas distribution plate having an inner surface facing the substrate holder, the inner surface being maintained below a threshold temperature to minimize process drift during processing of substrates.