K
Kam S. Law
Researcher at Applied Materials
Publications - 93
Citations - 4420
Kam S. Law is an academic researcher from Applied Materials. The author has contributed to research in topics: Layer (electronics) & Deposition (phase transition). The author has an hindex of 33, co-authored 93 publications receiving 4420 citations.
Papers
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Patent
Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
David Nin-Kou Wang,John M. White,Kam S. Law,Cissy Leung,Salvador P. Umotoy,Kenneth S. Collins,John A. Adamik,Ilya Perlov,Dan Maydan +8 more
TL;DR: In this paper, a single wafer, semiconductor processing reactor is described, which is capable of thermal CVD, plasmaenhanced CVD and plasma assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing.
Patent
Reactor chamber self-cleaning process
Kam S. Law,Cissy Leung,Ching C. Tang,Kenneth S. Collins,Mei Chang,Jerry Y. K. Wong,David Nin-Kou Wang +6 more
TL;DR: In this paper, a two-step continuous etch sequence is used in which the first step uses relatively high pressure, close electrode spacing and fluorocarbon gas chemistry for etching the electodes locally and the second step uses a relatively lower pressure, farther electrode spacing, and fluorinated gas chemistry to etch throughout the chamber and exhaust system.
Patent
CVD of silicon oxide using TEOS decomposition and in-situ planarization process
David Nin-Kou Wang,John M. White,Kam S. Law,Cissy Leung,Salvador P. Umotoy,Kenneth S. Collins,John A. Adamik,Ilya Perlov,Dan Maydan +8 more
TL;DR: In this paper, a high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD and plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing.
Patent
Process for PECVD of silicon oxide using TEOS decomposition
David Nin-Kou Wang,John M. White,Kam S. Law,Cissy Leung,Salvador P. Umotoy,Kenneth S. Collins,John A. Adamik,Ilya Perlov,Dan Maydan +8 more
TL;DR: In this article, a high pressure, high throughput, single wafer, semiconductor processing reactor is described which is capable of thermal CVD, plasma-enhanced CVD and plasma assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing.
Patent
Method and apparatus for protection of conductive surfaces in a plasma processing reactor
TL;DR: In this article, an apparatus and method for protecting conductive, typically metallic, walls of a plasma process chamber from accumulation of contaminants thereon and from reaction with a gas plasma and either deposition-gas plasma by-products is presented.