Patent
Dielectrically isolated semiconductor devices
TLDR
In this article, the authors describe the fusing of two silicon bodies where at least one of these bodies has a region of silicon oxide, and the bodies are contacted so that the silicon oxide is at an interface between the two bodies.Abstract:
Dielectrically isolated single crystal silicon of high quality is produced by an extremely convenient process. This process involves the fusing of two silicon bodies where at least one of these bodies has a region of silicon oxide. The bodies are contacted so that the silicon oxide is at an interface between the two bodies. The bodies are then heated to an elevated temperature while applying a nominal electrical potential across the interface. This combination of applied potential and temperature permanently fuses the two bodies without producing any significant damage to the crystal quality of these bodies.read more
Citations
More filters
Patent
Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
TL;DR: In this paper, integrated semiconductor-on-insulator (SOI) sensors and circuits which are electrostatically bonded to a support substrate, such as glass or an oxidized silicon wafer, are disclosed.
Patent
Process of fabricating a semiconductor substrate
Kenji Yamagata,Takao Yonehara +1 more
TL;DR: In this article, a process for preparing a semiconductor substrate comprises a step of porousifying a silicon monocrystalline substrate to form a porous layer, a step making a silicon polysilicon thin film to epitaxially grow on a surface of the porous layer.
Patent
Semiconductor memory device.
TL;DR: In this paper, the read circuit senses a change in a voltage of the bitline of a bitline, and applies a voltage which is different from the first voltage to the gate of the first transistor when it senses a voltage change.
Patent
Method of manufacturing semiconductor substrate
TL;DR: In this article, a method of manufacturing a semiconductor substrate having a modified layer therein comprises the steps of mirror-polishing one surface of each of first and second semiconductor plates (21,23), forming the modified layer (22) on at least one of the polished surfaces of the first, second, and third semiconductor plate surfaces, and bonding them with each other in a clean atmosphere.
Patent
Method of bonding crystalline silicon bodies
TL;DR: In this paper, a method of bonding two single-crystal silicon bodies comprises the steps of mirror-polishing the contact surfaces of the bodies to reduce the surface roughness to 500A or less, removing contaminant from the mirrorpolished surfaces, and bringing the surfaces into mutual contact so that substantially no foreign substance enter the gap between these surfaces.
References
More filters
Patent
Application of field-assisted bonding to the mass production of silicon type pressure transducers
TL;DR: In this article, a method for mass producing silicon type pressure transducers and transducers resultant therefrom is described, where the major components of a plurality of transducers are simultaneously joined together by a field-assisted bonding technique, which allows the components to be made of materials having an approximate match in coefficients of thermal expansion.
Patent
Method of forming an integrated circuit structure with fully-enclosed air isolation
TL;DR: In this article, a pattern of cavities extending from one surface of a silicon substrate into the substrate to laterally surround and electrically isolate said plurality of substrate pockets, and then forming a first layer of silicon dioxide on said first substrate surface.
Patent
Glass-polysilicon dielectric isolation
TL;DR: A COMPOSITE SUBSTRATE and METHOD for MAKING DIELECTRICALLY ISOLATED DIFFUSED SEMICONDUCTOR DEVICES is discussed in this article.
Patent
Method of manufacturing semiconductor integrated circuit with prevention of substrate warpage
TL;DR: In this article, the passivation film lying on the substrate during the oxidation and diffusion process warping of the substrate that may be caused due to the diffusion or penetration of oxygen into the polycrystalline semiconductor region is prevented.
Patent
Integrated semiconductor devices and fabrication methods therefor
TL;DR: In this paper, the authors proposed a fabrication method for insulator encapsulated, dielectrically isolated, integrated semiconductor devices including fabrication methods therefor and, more particularly, for ICs.