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Journal ArticleDOI

Direct current conduction in ammonium and potassium dihydrogen phosphate

L. B. Harris, +1 more
- 15 May 1973 - 
- Vol. 58, Iss: 10, pp 4550-4557
TLDR
In this article, the enthalpy of defect migration in KDP and ADP was shown to be 0.53 eV and 0.46 eV, respectively, in both cases.
Abstract
Experiment, plus critical discussion of previous work, suggests the following. Conductivity is primarily due to the migration of L defects (proton vacancies), the enthalpy for L‐defect mobility being 0.53 eV in KDP and 0.46 eV in ADP. Such L defects are produced by impurities, but there is an additional tendency towards incipient decomposition in both crystals. This leads to a high‐temperature conductivity which, in KDP, is associated with the formation of water molecules and the thermal generation of L defects and, in ADP, with the formation of ammonia molecules and the thermal generation of proton vacancies in the ammonium lattice (A defects). The enthalpy of L‐defect formation in KDP is 0.46 eV; that for A‐defect formation in ADP is 0.19 eV. Previously reported overheating effects are spurious. The conductivity is independent of field.

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Correction: Selective precipitation of alkyl dihalides using a newly synthesized water-soluble bisphosphorylpillar[5]arene

TL;DR: Bisphosphorylpillar[5]arenes ( and ) were synthesized and used to study the host-guest complexation in organic solvents and water to detect or separate alkyl dihalides in water due to the rapid precipitation of the complex.
Journal ArticleDOI

Low-temperature time-resolved vacuum ultraviolet luminescent spectroscopy of KH 2 PO 4 crystals with defects

TL;DR: In this paper, low-temperature photoluminescence (PL) of unactivated KDP crystals under selective synchrotron excitation is measured with sub-nanosecond time resolution.
Journal ArticleDOI

Separation of surface and bulk electrical conductivity in KH2PO4 and KH2AsO4 crystals at high temperatures

TL;DR: The electrical conductivity measurements on single crystals of KH2PO4 and KH2AsO4 have been carried out in the temperature range from room temperature to 200°C.
Journal ArticleDOI

Impedance relaxation of ? at high temperatures

TL;DR: In this paper, an equivalent circuit model based on two parallel G-C circuits was adopted to describe the impedance relaxational behaviour observed below and above. From this method, the relaxation times consisting of two components: the fast component due to proton migration and the slow component resulting from electrode - crystal interfacial polarization.
References
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Journal ArticleDOI

Piezoelectric Crystals and Their Applications to Ultrasonics

Warren P. Mason, +1 more
- 01 May 1951 - 
TL;DR: Piezoelectric crystals and their application to ultrasonics were discussed in this paper, where the authors proposed a method for the extraction of the ultrasonic properties of these crystals.
Journal ArticleDOI

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