Patent
Dry-etch for silicon-and-nitrogen-containing films
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TLDR
In this paper, a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing preconditioner is used to selectively remove exposed silicon-and-nitrogen-containing material.Abstract:
A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.read more
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Semiconductor processing system and methods using capacitively coupled plasma
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Conformal layers by radical-component cvd
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References
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Method of manufacturing a semiconductor device
TL;DR: In this paper, a method and corresponding article of manufacture are provided for manufacturing a semiconductor device with contact holes of the same step formed by two photolithography processes, where the manufacture includes forming a photoresist pattern by a first photolithographic process on an insulating interlayer in which a first contact hole is formed, the photorensist pattern covering the first contact holes, etching the inner layer to form a second contact hole by using the photoresists pattern as an etching mask, and partially removing the pattern to remove an etch byproduct from the
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TL;DR: In this paper, a self-contained remote plasma generator is mounted on the lid of a semiconductor processing chamber to provide better cleaning of the chamber and lower perfluorocarbon emissions than in situ plasma clean processes.
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Method to improve the step coverage and pattern loading for dielectric films
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Removal of transition metal ternary and/or quaternary barrier materials from a substrate
TL;DR: In this article, a process for the selective removal of a substance from a substrate for etching and/or cleaning applications is described, where the substrate is provided with a transition metal ternary compound and the substance is then reacted with a process gas comprising a fluorine-containing gas and optionally an additive gas.