Patent
Method to improve the step coverage and pattern loading for dielectric films
TLDR
In this paper, a method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided, which includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer, treating the deposited layer with a plasma, and repeating the exposing and treating until a desired thickness of the layer is obtained.Abstract:
A method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided. The method includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer, treating the deposited layer with a plasma, and repeating the exposing and treating until a desired thickness of the layer is obtained. The plasma may be generated from an oxygen-containing gas.read more
Citations
More filters
Patent
Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Patent
Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
TL;DR: In this paper, the authors described methods of depositing a silicon oxide layer on a substrate, which may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber and introducing the atomic oxygen precursors into the chamber.
Patent
Plasma activated conformal dielectric film deposition
Shankar Swaminathan,Jon Henri,Dennis M. Hausmann,Pramod Subramonium,Mandyam Sriram,Vishwanathan Rangarajan,Kirthi K. Kattige,Bart van Schravendijk,Andrew John McKerrow +8 more
TL;DR: In this article, the dopant species is delivered to the film between the cycles of adsorption and reaction in a surface-mediated reaction, where a film is grown over one or more cycles of reaction.
Patent
A method for depositing and curing low-k films for gapfill and conformal film applications
TL;DR: In this article, the authors described methods of making a silicon oxide layer on a substrate, which may include forming the silicon oxide on the substrate in a reaction chamber by reacting an atomic oxygen precursor and a silicon precursor.
Patent
Process feed management for semiconductor substrate processing
Fred Pettinger,Carl White,Dave Marquardt,Sokol Ibrani,Eric Shero,Todd Dunn,Kyle Fondurulia,Mike Halpin +7 more
TL;DR: In this paper, a gas channel plate for a semiconductor process module is described, which includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps.
References
More filters
Patent
Plasma processes for depositing low dielectric constant films
David Cheung,Wai-Fan Yau,Robert P. Mandal,Shin-Puu Jeng,Kuo-Wei Liu,Yung-Cheng Lu,Michael Barnes,Ralf B. Willecke,Farhad Moghadam,Tetsuya Ishikawa,Tze Wing Poon +10 more
TL;DR: In this article, a method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level is presented.
Patent
Hydrogenated oxidized silicon carbon material
TL;DR: In this paper, a low dielectric constant, thermally stable hydrogenated oxidized silicon carbon (HOSOC) film which can be used as an interconnect dielectrics in IC chips is disclosed.
Patent
Post-deposition treatment to enhance properties of Si-O-C low k films
TL;DR: In this paper, a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ was proposed. But this method is not suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
Patent
Method to form ultra high quality silicon-containing compound layers
TL;DR: In this article, multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers, using trisilane as the silicon precursor.
Patent
Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications
TL;DR: In this paper, a method for forming a low-k dielectric film, in particular, a pre-metal Dielectric (PMD) on a semiconductor wafer which has good gap-filling characteristics, is described.