Patent
Methods for etch of sin films
TLDR
In this paper, a method of selectively etching silicon nitride from a substrate comprising a silicon oxide layer and a silicon dioxide layer is proposed. But the method requires the substrate to be exposed to the reactive gas in the gas reaction region of the substrate processing chamber.Abstract:
A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.read more
Citations
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Patent
Semiconductor processing system and methods using capacitively coupled plasma
Jang-Gyoo Yang,Matthew L. Miller,Xinglong Chen,Kien N. Chuc,Qiwei Liang,Shankar Venkataraman,Dmitry Lubomirsky +6 more
TL;DR: In this paper, a capacitively coupled plasma (CCP) unit is described inside a process chamber, and a pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
Patent
Semiconductor processing systems having multiple plasma configurations
TL;DR: In this paper, the authors describe a system that includes a first plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access.
Patent
Methods for etch of metal and metal-oxide films
TL;DR: In this paper, a method of selectively etching a metal-containing film from a substrate comprising a metal containing layer and a silicon oxide layer is proposed, which involves flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorinecontaining gas to generate a plasma in the plasma generation area.
Patent
Processing systems and methods for halide scavenging
Anchuan Wang,Xinglong Chen,Zihui Li,Hiroshi Hamana,Zhijun Chen,Ching-Mei Hsu,Jiayin Huang,Nitin K. Ingle,Dmitry Lubomirsky,Shankar Venkataraman,Randhir Thakur +10 more
TL;DR: In this article, a system, chambers, and processes are provided for controlling process defects caused by moisture contamination in a vacuum or controlled environment, and the chambers may include configurations to provide additional processing capabilities in combination chamber designs.
Patent
Radical chemistry modulation and control using multiple flow pathways
TL;DR: In this paper, the authors describe a semiconductor processing chamber that includes a first remote plasma system fluidly coupled with a first access of the chamber, and a second remote plasminar with a second access to the chamber.
References
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Patent
Semiconductor device, manufacturing method, and electronic device
TL;DR: In this paper, the authors proposed a thin-film transistor with an active layer made of polycrystalline zinc oxide (ZnO) to which a group V element is added.
Patent
Multiple chamber integrated process system
Dan Maydan,Sasson Somekh,David Nin-Kou Wang,David Cheng,Masato M. Toshima,Isaac Harari,Peter D. Hoppe +6 more
TL;DR: In this paper, an integrated modular multiple chamber vacuum processing system is described, which includes a load lock, may include an external cassette elevator and an internal load lock wafer elevator, and also includes stations about the periphery of the load lock for connecting one, two or several vacuum process chambers to the load-lock chamber.
Patent
Plasma processing apparatus
TL;DR: In this paper, the problem of providing a plasma processing apparatus with a gas feed means which feeds gas in pulses into a reaction chamber, where the processing speed and shape of a sample can be set uniform through all its surface, even if an ultrasonic free flow is not established.
Patent
Dry etching method
TL;DR: In this article, a dry etching method for aluminum-based layer for effectively combatting the after-corrosion in accordance with three aspects is presented, while a resist mask and chlorine based gas as known per se are used, S 2 F 2 is used during etching of the barrier metal layer.
Patent
Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
David Nin-Kou Wang,John M. White,Kam S. Law,Cissy Leung,Salvador P. Umotoy,Kenneth S. Collins,John A. Adamik,Ilya Perlov,Dan Maydan +8 more
TL;DR: In this paper, a single wafer, semiconductor processing reactor is described, which is capable of thermal CVD, plasmaenhanced CVD and plasma assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing.