Patent
Field effect device
TLDR
In this paper, a field effect transistor of the insulated gate type is used as a photodetector with a gain greater than unity, where the transistor is biased in the '''''off'''' state by a substrate potential resulting from the provision of an external voltage supply in the source-to-substrate loop.Abstract:
A field-effect device is provided which comprises a field effect transistor of the insulated gate type. The device is capable of being used as a photodetector with a gain greater than unity. To this end, the transistor is biased in the ''''off'''' state by a substrate potential (source-to-substrate) resulting from the provision of an external voltage supply in the source-tosubstrate loop. Upon the radiation of the source and drain junctions in the transistor, a current is caused to flow between the source and drain electrodes which result in a current gain in excess of unity.read more
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