Patent
Field-effect devices
TLDR
In this article, an insulated-gate field-effect transistor has polycrystalline silicon or other resistance layer connected between its gate and drain electrode to permit during operation of the device the formation of a potential distribution along the resistance layer.Abstract:
A field-effect device, e.g. an insulated-gate field-effect transistor has field-relief means in the form of a polycrystalline silicon or other resistance layer connected between its gate and drain electrode to permit during operation of the device the formation of a potential distribution (V G , V D ) along the resistance layer. The resistance layer and its potential distribution extend over the current path in a low-doped drain zone to permit a high drain breakdown voltage without an unacceptable increase in drain series resistance or unacceptable decrease in transconductance.read more
Citations
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Proceedings ArticleDOI
Fast switching lateral insulated gate transistor
TL;DR: In this paper, a modified LIGT structure was proposed, where an additional n+region was added to the p+injector to improve the switching speed of the Lateral Insulated Gate Transistor.
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High voltage MOS transistor
TL;DR: In this article, a metal oxide semiconductor device is featured by the provision of a covering element for covering a channel region of the semiconductor devices there being interposed therebetween an insulating layer.
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Semiconductor sensor with piezoresistors and improved electrostatic structures
Kurt E. Peterson,Lee A. Christel +1 more
TL;DR: In this article, an electromechanical sensor is provided which comprises an n-type semiconductor region which defines a flexible member surrounded by a thicker base portion, at least one piezoresistor formed in the semiconductor regions, an n+ region formed in a base portion; a first insulative layer which overlays the piezoreistor and which extends at least from the pieZoresistor to the first n+ doped region; a guard layer that overlays at least a portion of the first INSulative layer such that the guard layer overlays and extends at at
Patent
High voltage field effect transistor and method of fabricating the same
Oh-Kyong Kwon,Lee Mueng-Ryul +1 more
TL;DR: In this article, a high voltage field effect transistor (HVFD) is described, which includes a semiconductor substrate, a first conductivity type well in the substrate, heavily doped impurity regions having first and second conductivity types in the first conductivities type drift region, a heavily-doped secondconductivity type impurity region in the second conductivities drift region.
Patent
Method of making a conductive path in multi-layer metal structures by low power laser beam
TL;DR: An integrated circuit device including a link point for electrically connecting a plurality of metal layers, comprising a first metal layer, a link insulating layer, another metal layer and diffusion barrier layers between the link insulator layer and each of the first metal layers and the second metal layer are connected by exposing the link point to low power laser for a relatively long pulse width.
References
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Patent
Insulated gate field effect transistor with source field shield extending over multiple region channel
Takeaki Okabe,Isao Yoshida,Shikayuki Ochi,Hidefumi Itoh,Masatomo Furumi,Toru Toyabe,Mineo Katsueda,Yukio Shirota +7 more
TL;DR: In this paper, an insulated gate field effect transistor with a source region and a drain region of the P-conductivity type which are disposed in surface portions of a semiconductor substrate of the N-condivity type in a manner to be spaced apart from each other is presented.
Patent
Implementation of surface sensitive semiconductor devices
TL;DR: A very high resistivity film overlying a junction-protecting oxide passivation layer and making electrical contact with the P-type material and the N material of the subject PN junction is utilized to neutralize the effects of accumulated charge on or within the oxide layer as mentioned in this paper.
Patent
Semiconductor device and method of electrically isolating circuit components thereon
Alfred C. Ipri,John Carl Sarace +1 more
TL;DR: In this article, the circuit components are electrically isolated from each other by a method of (1) forming a layer of insulating material over the layer of semiconductor material and between the circuit component, (2) forming an electrically conductive material over this layer of material, and (3) providing bias means between these layers of material and the layers of semiconductive material.
Patent
Resistive gate field effect transistor
TL;DR: In this article, a resistive gate field effect transistor (FET) is described, in which the gate comprises a resistor film overlying an insulating layer and in contact with both the source and drain electrodes.