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Frequency modulated oscillator circuit utilizing avalanche diode

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The article was published on 1968-02-23. It has received 8 citations till now. The article focuses on the topics: Vackář oscillator & Hartley oscillator.

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Citations
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Solid state oscillator having semiconductor elements mounted in a cavity resonator

TL;DR: A solid state oscillator comprising a cavity resonator having an output portion, at least two semi-conductor elements disposed in an equi-phase plane of an electromagnetic field, and means for applying a bias voltage to each of said semiconductor elements is defined in this article.
Patent

Millimeter wave source

TL;DR: In this article, the source of millimeter wave solid ETST uses avalanche diodes, and the source is frequency modulated by varying the bias voltage (V) of the D. The source radiates in a waveguide.
Patent

Varactor-controlled pn junction semiconductor microwave oscillation device

TL;DR: In this article, a solid state microwave generating device comprising a 3-terminal element having a p-n junction representing a negative resistance and a junction of which the junction capacitance is varied according to a voltage applied thereto.
Patent

Avalanche diode circuits

TL;DR: In this article, an avalanche diode of the type capable of generating Trapatt mode oscillations is used for generating extremely sharp output voltage spikes, which can be used for high speed gating, pulse regeneration, or harmonic generation.
Patent

Tunable oscillator/amplifier circuit for millimeter-wave diodes

TL;DR: In this article, microwave oscillator or amplifier circuitry which is tunable over a wide bandwidth and which includes an improved variable loading on a negative resistance semiconductor diode, such as an IMPATT diode.
References
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Negative resistance microwave device

TL;DR: In this paper, an oscillator or an amplifier incorporates a PININ or NIPIP diode which when suitably energized forms an impact ionization transittime device exhibiting a dynamic resonance characteristic.
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