Patent
Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
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TLDR
In this article, an optoelectronic device with a Group III nitride active layer and a buffer structure selected from the group consisting of gallium nitride and indium gallium oxide between the silicon carbide substrate and the diode was described.Abstract:
An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.read more
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Vertical geometry light emitting diode with group iii nitride active layer and extended lifetime
TL;DR: In this article, a light emitting diode (LED) is characterized by an extended lifetime, which consists of a conductive silicon carbide substrate (21), an ohmic contact (22) to the substrate, conductive buffer layer (23), and a double heterostructure (24) including a p-n junction on the buffer layer in which the active (25) and heterostructures layers (26, 27) are selected from the group consisting of binary Group III nitrides and ternary Group III compounds having the formula AxB1-x
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Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
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