Patent
High-frequency apparatus using quartz crystal resonator and its production method
TLDR
In this article, a high-frequency apparatus using a quartz crystal resonator including a voltage controlled oscillator, a temperature compensated quartz crystal oscillator and the like is described, in which the resonator itself is bonded with coupling of silicon, oxygen, hydrogen, hydroxyl group, and other groups directly to a semiconductor substrate having an active element.Abstract:
Disclosed is a high-frequency apparatus using a quartz crystal resonator including a voltage controlled oscillator, a temperature compensated quartz crystal oscillator and the like, in which a quartz crystal resonator itself is bonded with coupling of silicon, oxygen, hydrogen, hydroxyl group and the like directly to a semiconductor substrate having an active element, thus being integrated in a unitary bodyread more
Citations
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Film bulk acoustic wave device
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TL;DR: In this paper, a small and well-characterized bulk acoustic wave device by fabricating a filter having wide band width or a resonator having a wide oscillation frequency range together with a semiconductor circuit is presented.
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TL;DR: The method of manufacturing a piezoelectric acoustic wave device includes the steps of forming a depression in at least one of the substrate and the picolectric plate, filling the depression with an intermediate support layer, cleaning the surfaces of the surface and the plate to directly bond to each other by a chemical bond, forming electrodes, and removing the intermediate support layers as mentioned in this paper.
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Microelectromechanical systems (mems) resonators and related apparatus and methods
David M. Chen,Jan H. Kuypers,Pritiraj Mohanty,Klaus Juergen Schoepf,Guiti Zolfagharkhani,Jason Goodelle,Reimund Rebel +6 more
TL;DR: In this article, the authors describe the fabrication of a piezoelectric material wafer to a substrate of a differing material, and a structure such as a resonator is then formed from the wafer.
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Methods of manufacture for electronic components having high-frequency elements
TL;DR: In this paper, an oscillatory piezoelectric filter was proposed to improve the frequency-temperature properties of the piezoclectric filters using direct bonding without using any adhesives.
References
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Journal ArticleDOI
Silicon‐to‐silicon direct bonding method
TL;DR: In this paper, it was found that strong bonding takes place when a pair of clean, mirror-polished silicon surfaces are contacted at room temperature after hydrophilic surface formation.
Journal ArticleDOI
Fundamental‐mode VHF/UHF minature acoustic resonators and filters on silicon
TL;DR: In this paper, a bulk acoustic-wave high-Q resonators and acoustically coupled resonator filters have been fabricated and operated at their fundamental half-wavelength mode in the 200-500 MHz frequency range.