Proceedings ArticleDOI
High performance mask fabrication process for the next-generation mask production
Keisuke Yagawa,Kunihiro Ugajin,Machiko Suenaga,Yoshihito Kobayashi,Takeharu Motokawa,Kazuki Hagihara,Masato Saito,Masamitsu Itoh +7 more
- Vol. 9256, pp 925608
TLDR
Wang et al. as discussed by the authors investigated a potential of mask fabrication process for finer patterning and achieved 17nm dense line pattern on mask plate by using VSB (Variable Shaped Beam) type EB mask writer and chemically amplified resist.Abstract:
ArF immersion lithography combined with double patterning has been used for fabricating below half pitch 40nm devices However, when pattern size shrinks below 20nm, we must use new technology like quadruple patterning process or next generation lithography (NGL) solutions Moreover, with change in lithography tool, next generation mask production will be needed According to ITRS 2013, fabrication of finer patterns less than 15nm will be required on mask plate in NGL mask production 5 years later [1] In order to fabricate finer patterns on mask, higher resolution EB mask writer and high performance fabrication process will be required In a previous study, we investigated a potential of mask fabrication process for finer patterning and achieved 17nm dense line pattern on mask plate by using VSB (Variable Shaped Beam) type EB mask writer and chemically amplified resist [2][3] After a further investigation, we constructed higher performance mask process by using new EB mask writer EBM9000 EBM9000 is the equipment supporting hp16nm generation's photomask production and has high accuracy and high throughput As a result, we achieved 155nm pattern on mask with high productivity Moreover, from evaluation of isolated pattern, we proved that current mask process has the capability for sub-10nm pattern These results show that the performance of current mask fabrication process have the potential to fabricate the next-generation maskread more
Citations
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Journal ArticleDOI
Scalable Manufacturing of Nanogaps
TL;DR: The most promising approaches that could achieve a breakthrough in research and commercial applications are identified and a detailed comparison of their merits is provided, with special focus on large-scale and reproducible manufacturing of nanogaps.
Journal ArticleDOI
Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch (7 nm space width and 21 nm line width) using electron beam lithography with chemically amplified resist processes: I. Relationship between sensitivity and chemical gradient
TL;DR: The feasibility of single nano patterning using EB lithography with a chemically amplified resist process was investigated in this article, where the latent images of line-and-space patterns with a 7 nm quarter-pitch (7 nm space width and 21 nm line width) were calculated on the basis of sensitization and reaction mechanisms of chemically amplified EB resists.
Journal ArticleDOI
Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist processes: II. Stochastic effects
TL;DR: In this article, the feasibility of single nano patterning by EB lithography with a chemically amplified resist process was investigated from the viewpoint of stochastic effects, and the latent images of line-and-space patterns with a 7 nm quarter-pitch (7 nm space width and 21 nm line width) were calculated using a Monte Carlo method on the basis of the sensitization and reaction mechanisms of chemically amplified EB resists.
Journal ArticleDOI
Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist process: III. Post exposure baking on quartz substrates
TL;DR: In this paper, the temporal change in the chemical gradient of line-and-space patterns with a 7 nm quarter pitch (7 nm space width and 21 nm line width) was calculated until it became constant, independently of postexposure baking (PEB) time.
Journal ArticleDOI
Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist process: IV. Comparison with experimental results
TL;DR: In this article, the feasibility of the fabrication of line-and-space patterns with a 7 nm quarter-pitch (7 nm space width and 21 nm line width), using the simulation based on the sensitization and reaction mechanisms of chemically amplified EB resists, was investigated.
References
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Proceedings ArticleDOI
UV-NIL templates for the 22nm node and beyond
Takaaki Hiraka,Satoshi Yusa,Akiko Fujii,Shiho Sasaki,Kimio Itoh,Nobuhito Toyama,Masaaki Kurihara,Hiroshi Mohri,Naoya Hayashi +8 more
TL;DR: In this paper, the authors have achieved further resolution by optimizing materials, their thicknesses, the developing and the etching processes, as well as the writing parameters of the 100keV SB (spot beam) writer.
Proceedings ArticleDOI
Potential of mask production process for finer pattern fabrication
Keisuke Yagawa,Kunihiro Ugajin,Machiko Suenaga,Yoshihito Kobayashi,Takeharu Motokawa,Kazuki Hagihara,Masato Saito,Masamitsu Itoh +7 more
TL;DR: In this paper, the authors examined the potential of mask production process with EB writer from the view of finer pattern fabrication performance and succeeded to fabricate a 17nm pattern on mask plate by using VSB (Variable======Shaped Beam) type EB mask writer with CAR (Chemically Amplified Resist).