Journal ArticleDOI
I-V characteristics of a thin-film transistor with graded channel thickness
T.H. Weng
- Vol. 64, Iss: 11, pp 1637-1638
TLDR
In this article, the expression for source-drain characteristics of a thin-film transister with linearly graded channel thickness is presented based on a depletion-type operating in an enhancement mode.Abstract:
The expression for source-drain characteristics of a thin-film transister with linearly graded channel thickness is presented based on a depletion-type operating in an enhancement mode. The saturation voltage derived from the I-V expression was found to decrease significantly, as compared to uniform channel having comparable semiconductor film thickness as the source end of the graded channel.read more
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Journal ArticleDOI
Physical processes in insulated-gate field-effect transistors
TL;DR: In this article, the currentvoltage characteristics of insulated-gate field effect transistors have been calculated for arbitrary ratios of the gate insulator-semiconductor thickness, and it was found that the failure of experimental devices to show current saturation for drain voltages beyond pinch-off can be attributed to the presence of partially ionized donors at the CdS-SiO interface.