B
B. E. Gnade
Researcher at University of Texas at Austin
Publications - 21
Citations - 350
B. E. Gnade is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Gate dielectric & Thin-film transistor. The author has an hindex of 12, co-authored 21 publications receiving 339 citations.
Papers
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Journal ArticleDOI
Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability
TL;DR: In this article, a hafnium silicon oxynitride gate dielectric with a universal channel mobility of ∼90% at 1MV∕cm, equivalent oxide thickness of approximately 1nm, and leakage current 200× less than SiO2 is reported.
Proceedings ArticleDOI
High performance gate first HfSiON dielectric satisfying 45nm node requirements
Manuel Quevedo-Lopez,Siddarth A. Krishnan,D. Kirsch,C.H.J. Li,J.H. Sim,Craig Huffman,Jeff J. Peterson,Byoung Hun Lee,G. Pant,B. E. Gnade,M. J. Kim,Robert M. Wallace,D. Guo,H. Bu,Tso-Ping Ma +14 more
TL;DR: In this article, an ALD-based HfSiON gate dielectric scaled to 1 nm EOT with excellent performance and reliability is presented, which can achieve electron and hole mobilities comparable to that of SiON.
Journal ArticleDOI
Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100)
TL;DR: In this paper, the authors used x-ray photoelectron spectroscopy and electrical measurements to characterize the as-deposited hafnium aluminate and nitrided HfAlO dielectrics.
Journal ArticleDOI
Impact of gate dielectric in carrier mobility in low temperature chalcogenide thin film transistors for flexible electronics
A. L. Salas-Villasenor,Israel Mejia,J. Hovarth,Husam N. Alshareef,Dongkyu Cha,Rafael Ramírez-Bon,B. E. Gnade,Manuel Quevedo-Lopez +7 more
TL;DR: In this paper, Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics, where CdS thin films were deposited by chemical bath deposition (70°C) on either 100 nm HfO 2 or SiO 2 as the gate dielectrics.
Journal ArticleDOI
Polarization behavior of poly(vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for nonvolatile memory application in flexible electronics
TL;DR: In this article, the time domain and electric field dependence of the polarization switching kinetics of poly(vinylidene fluoride-trifluoroethylene) copolymer based thin film metal-ferroelectric-metal capacitors have been characterized.