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Patent

Integrated circuit with separate supply voltage for memory that is different from logic circuit supply voltage

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TLDR
In this article, the memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use, and the memory cell responds to the read using signals that are referenced to the first-supply voltage.
Abstract
In one embodiment, an integrated circuit includes at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a second supply voltage. The memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use. In another embodiment, a method includes a logic circuit reading a memory cell, the logic circuit supplied by a first supply voltage; and the memory cell responding to the read using signals that are referenced to the first supply voltage, wherein the memory cell is supplied with a second supply voltage that is greater than the first supply voltage during use.

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Citations
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References
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Journal ArticleDOI

A 160 MHz 32 b 0.5 W CMOS RISC microprocessor

TL;DR: This custom VLSI implementation of a microprocessor architecture delivers 184 Drystone/MIPS at 162 MHz dissipating 0.5 W using an 1.5 V internal supply and Clock generation uses an on-chip PLL with 3.68 MHz input clock to minimize high frequency clock signals on the board.
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TL;DR: In this article, a sense amplifier for use in a CMOS static random access memory is proposed, which consists of two sensing transistors with their sources coupled to a common pull down node, a pull down transistor for drawing current from the pulldown node during sensing operations, and a four transistor latch coupled to the drains of the two transistors, typically latching in less than two nanoseconds.
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