Patent
Lateral high voltage transistor having spiral field plate and graded concentration doping
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TLDR
In this paper, a lateral high voltage transistor device is disclosed, which includes a gate, a drain, and a source, and the drain is located apart from the gate to form an intermediate drift region.Abstract:
A lateral high voltage transistor device is disclosed. The transistor includes a gate, a drain, and a source. The drain is located apart from the gate to form an intermediate drift region. The drift region has variable dopant concentration between the drain and the gate. In addition, a spiral resistor is placed over the drift region and is connected to the drain and either the gate or the source of the transistor.read more
Citations
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References
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Journal ArticleDOI
Optimization and surface charge sensitivity of high-voltage blocking structures with shallow junctions
TL;DR: The most commonly used high-voltage blocking and termination structures-floating field limiting rings (FLR), lateral charge control HVIC devices, and junction termination extension (JTE) structures-are very sensitive to positive silicon and silicon dioxide interface charges as mentioned in this paper.
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Stacked high voltage transistor unit
Mohamad M. Mojaradi,Tuan A. Vo +1 more
TL;DR: A high current, high voltage transistor which can be easily electrically stacked to extend the voltage range and uses less silicon area than a conventional stacked transistor configuration and a configuration of field plates that provide the greatest breakdown voltages with the highest ohmic values as discussed by the authors.
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Lightly doped drain MOSFET with reduced on-resistance
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MOS transistor with high output voltage endurance
TL;DR: In this paper, an MOS transistor with high output voltage endurance comprising a semiconductor substrate (10) whose surface (18) contains a doping area (44) with a surface-doping concentration which decreases from the drain connection area (20) to the drain-side edge (34) of the gate oxide layer (30).
Patent
Spiral resistor integrated on a semiconductor substrate
TL;DR: In this article, a spiral resistor is defined as a type formed on a semiconductor substrate to withstand high voltages, which comprises at least one thin field-plate layer covering the substrate between adjacent turns of the resistor.