Patent
Light emitting devices having dislocation density maintaining buffer layers
Long Yang,William Fenwick +1 more
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TLDR
In this paper, a method for forming a light emitting device comprises forming a buffer layer having a plurality of layers comprising a substrate, an aluminum gallium nitride layer adjacent to the substrate, and a gallium oxide layer adjacent with the substrate.Abstract:
A method for forming a light emitting device comprises forming a buffer layer having a plurality of layers comprising a substrate, an aluminum gallium nitride layer adjacent to the substrate, and a gallium nitride layer adjacent to the aluminum gallium nitride layer. During the formation of each of the plurality of layers, one or more process parameters are selected such that an individual layer of the plurality of layers is strained.read more
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Patent
Process feed management for semiconductor substrate processing
Fred Pettinger,Carl White,Dave Marquardt,Sokol Ibrani,Eric Shero,Todd Dunn,Kyle Fondurulia,Mike Halpin +7 more
TL;DR: In this paper, a gas channel plate for a semiconductor process module is described, which includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps.
Patent
Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
TL;DR: In this paper, a process and system for depositing a thin film onto a substrate using atomic layer deposition (ALD) is described. But it is not shown how to apply ALD to a metal oxide layer.
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Gas Supply Manifold And Method Of Supplying Gases To Chamber Using Same
Lucian Jdira,Herbert Terhorst,Michael W. Halpin,Carl White,Todd Dunn,Eric Shero,Melvin Verbass,Christopher Wuester,Kyle Fondurulia +8 more
TL;DR: In this paper, a gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas-inlet port of the Wafer Processing Reactor.
References
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Patent
Nitride semiconductor light emitting device
TL;DR: In this paper, a p-type n-type semiconductor layer is provided in contact with the other surface of the active layer of a single-quantum well structure and a second n-style semiconductor is provided on the first layer.
Patent
Nitride semiconductor device
Shinichi Nagahama,Masayuki Nichia Chemical Industries Ltd. Senoh,Shuji Nichia Chemical Industries Ltd. Nakamura +2 more
TL;DR: In this paper, the super lattice structure of a light emitting device (LED) was proposed to make working current and voltage of the device lower, resulting in realization of more efficient devices.
Patent
Enhanced light extraction in LEDs through the use of internal and external optical elements
TL;DR: In this paper, the authors describe new LEDs having light extraction structures (26) on or within the LED to increase its efficiency, providing surfaces for reflecting, refracting or scattering light into directions that are more favorable for the light to escape into the package.
Journal ArticleDOI
Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency.
TL;DR: It is shown that under suitable growth conditions hexagonal V-shaped pits decorating the defects exhibit narrow sidewall quantum wells with an effective band gap significantly larger than that of the regular c-plane quantum wells.
Patent
Light-emitting gallium nitride-based compound semiconductor device
TL;DR: In this paper, a light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure is presented, which includes a lightemitting layer formed of a low-resistivity In x Ga 1-x N (0