Patent
Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
Satoshi Inoue,Tatsuya Shimoda +1 more
TLDR
In this article, a method of manufacturing an active matrix substrate is provided that uses a technique of transferring a thin film device, where an insulator film such as an interlayer insulation film or the like, is previously removed before the pixel electrodes are formed.Abstract:
A method of manufacturing an active matrix substrate is provided that uses a technique of transferring a thin film device. In forming thin film transistors and pixel electrodes on an original substrate before transfer, an insulator film such as an interlayer insulation film or the like, is previously removed before the pixel electrodes are formed. Further, the original substrate is separated by exfoliation to transfer the device to a transfer material to cause the pixel electrodes to partially appear in the surface or the vicinity of the surface of the device. This portion permits application of a voltage to a liquid crystal through the pixel electrode.read more
Citations
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Patent
Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Patent
Light emitting device and method of manufacturing the same
Satoshi Seo,Shunpei Yamazaki +1 more
TL;DR: In this article, the surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring, and a terminal is similarly plated in order to make the resistance reduction.
Patent
Nitride semiconductor light emitting device
TL;DR: In this paper, a p-type n-type semiconductor layer is provided in contact with the other surface of the active layer of a single-quantum well structure and a second n-style semiconductor is provided on the first layer.
Patent
Light-emitting device and method of manufacturing the same
TL;DR: In this article, a light emitting diode (LED) was manufactured by using a wafer bonding method and a method of manufacturing a LED by using the same wafer-bonding method.
Patent
Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
TL;DR: In this paper, the authors proposed a transfer method that includes providing a substrate, forming a separation layer over the substrate, and forming a transferred layer over separation layer, and partly cleaving the separation layer such that a part of the transferred layer is transferred to a transfer member in a given pattern.
References
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Patent
Single crystal silicon arrayed devices for display panels
Paul M. Zavracky,John C. C. Fan,R.W. McClelland,Jeffrey Jacobsen,Brenda Dingle,Mark B. Spitzer +5 more
TL;DR: In this paper, a display panel is formed using essentially single crystal thin-film material that is transferred to substrates for display fabrication and pixel arrays form light valves or switches that can be fabricated with control electronics in the thinfilm material prior to transfer.
Patent
High density electronic circuit modules
TL;DR: In this paper, the authors describe the formation of complex multi-function circuitry on common module substrates using circuit tiles of silicon thin-films which are transferred, interconnected and packaged.
Patent
Method for preparing semiconductor member
TL;DR: In this paper, a method for preparing a semiconductor member comprises process of making a porous Si substrate and then forming a non-porous Si monocrystalline layer on the porous substrate, primary bonding process of bonding the porous si substrate and an insulating substrate via the nonporous si monocrystaline layer, etching process of etching the porous Si to remove the porousSi by chemical etching after the primary bonding, and secondary bonding process strengthening the primary coupling after the etching.
Patent
Method of manufacturing semiconductor article
TL;DR: In this paper, a method of manufacturing a semiconductor article comprises steps of forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type.