Mechanism of condensation of heteroepitaxial A3B5 layers pulse of moderate power

TLDR: In this paper, the authors studied the mechanism of condensation of heteroepitaxial layers in laser deposition on GaAs films on NaCl, and proposed a mechanism to explain the reduction of temperature in single crystal growth under laser deposition: high energy ion component of laser plasma gives rise to orienting defects on the substrate surface, and these defects determine epitaxial growth.

Abstract: The mechanism of condensation of heteroepitaxial layers in laser deposition was studied on GaAs films on NaCl. Films were deposited in a superhigh vacuum using laser pulses of moderate power. Pulsed deposition proved to be more suitable for nucleation and growth than continuous deposition. However in this case it is important to compare the number of atoms deposited per pulse and the number of preferential adsorption centres in the substrate temperature of 310 °C. The density of dislocations in the films was about 109 cm−2. The main reasons for the dislocations are the excess of low volatile component and thermal stresses. Using a laser with quantum energy higher than the energy gap of the deposited semiconductor GaAs, which provides congruent evaporation, and making an additional deposition of As, we could reduce dislocations to 107 cm−2. A mechanism is proposed to explain the reduction of temperature in single crystal growth under laser deposition: high energy ion component of laser plasma gives rise to orienting defects on the substrate surface, and these defects determine epitaxial growth. [Russian Text Ignored].