Patent
Method for correcting an optical proximity effect in an interconnect pattern by shortening the legs of cutout patterns to avoid linewidth reduction
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TLDR
In this paper, a method for correcting an optical proximity effect in an exposure process includes the step of extracting corner portions of a mask interconnect pattern, providing a default “L”-shaped cutout correction pattern on the inner corner of the extracted corner portion, extracting a pair of corner portions in proximity, adjusting the distance of the opposing ends of the default cutout corrections to have a specified space.Abstract:
A method for correcting an optical proximity effect in an exposure process includes the step of extracting corner portions of a mask interconnect pattern, providing a default “L”-shaped cutout correction pattern on the inner corner of the extracted corner portion, extracting a “]”-shaped pattern including a pair of corner portions in proximity, adjusting the distance of the opposing ends of the default cutout correction patterns in the “]”-shaped pattern to have a specified space. The method prevents the width of the straight portion of the “]”-shaped pattern of the resultant interconnect from being made smaller than the design width.read more
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Patent
System and method for reducing patterning variability in integrated circuit manufacturing through mask layout corrections
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References
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Patent
Proximity correction system for wafer lithography
TL;DR: In this paper, a system for computing a pattern function for a polygonal pattern having a finite number of predetermined face angles is presented, which includes the steps of decomposing the polygon into a set of flashes, computing the pattern function by summing together all flashes evaluated at a point (x,y), and returning a 1 if a point is inside a polygons and otherwise will return a 0.
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Interlayer method utilizing CAD for process-induced proximity effect correction
TL;DR: In this paper, a method for interlayer corrections for photolithographic patterns that are reproduced on a wafer surface capable of correcting not only the optically induced proximity effect but also the process-induced proximity effect is presented.
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Method of manufacturing semiconductor device
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