Patent
Method for manufacturing polycrystalline silicon
TLDR
In this paper, the authors proposed a method for manufacturing polycrystalline silicon with high quality by effectively preventing undesired shape such as giving an rough surface to silicon rods or an irregularity in diameter of the silicon rods.Abstract:
A method for manufacturing polycrystalline silicon with high quality by effectively preventing undesired shape such as giving an rough surface to silicon rods or an irregularity in diameter of the silicon rods. The method for manufacturing polycrystalline silicon includes: an initial stabilizing step of deposition wherein a velocity of ejecting the raw material gas from the gas ejection ports is gradually increased; the shaping step wherein first the ejection velocity is increased at a rate higher than that in the stabilizing step and then the ejection velocity is gradually increased at a rate lower than the previous increasing rate; and a growing step wherein, after the shaping step, the ejection velocity is made slower than that at the end of the shaping step until the end of the deposition.read more
Citations
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Patent
Silicon production with a fluidized bed reactor integrated into a siemens-type process
TL;DR: In this article, the vent gas from the Siemens reactor was used as a feed gas to the fluidized bed reactor to produce polycrystalline silicon, which was then fed to the same source.
Patent
Method and apparatus for producing polycrystalline silicon and polycrystalline silicon
TL;DR: A polycrystalline silicon producing method with preventing meltdown and maintaining a high growing rate and a high yield by increasing temperature of raw material gas before supplying them to a reactor in a high pressure state so as to lower convection heat transfer from a silicon rod was proposed in this article.
Patent
Polycrystalline silicon producing method, apparatus for producing polycrystalline silicon, and polycrystalline silicon
TL;DR: A polycrystalline silicon producing method includes: the first process and the second process as discussed by the authors, where a surface temperature is maintained at a predetermined range by adjusting the current value to the silicon seed rod.
Patent
Granular polycrystalline silicon and production thereof
TL;DR: Granular polycrystalline silicon includes a compact matrix including radiating acicular crystal aggregates of crystal size from 0001-200 μm as mentioned in this paper. But this process requires a large amount of granular silicon.
Patent
Poly silicon deposition device
TL;DR: In this article, a poly silicon deposition device, which includes an electrode part, a silicon core rod part, an electrode heating part, and a gas supply pipe, is presented.
References
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Patent
Process for depositing elemental silicon semiconductor material from a gas phase
TL;DR: In this paper, a semiconductor material is deposited on heated rod-shaped mandrels from a reactive gas stream capable of pyrolytically depositing silicon wherein the gas stream is regulated in such a manner that the silicon deposition rate remains constant per cubic centimeter of mandrel surface throughout the deposition process.
Patent
Method for producing polycrystalline silicon for semiconductor
Sanji Ochiai,三二 落合 +1 more
TL;DR: In this paper, the surface temperature of a polycrystalline silicon rod is maintained within the range between 950 and 1,050°C and the feeding rate of the raw material gas per unit surface area is regulated within a range between 3.5×10 -4 and 9.0-×10 −4 mol/cm 2 min in reaction time zone when the rod surface area was 20% or more of that at the end of the reaction.
Patent
Method and device for producing semiconductor grade multi-crystal silicon
TL;DR: In this paper, an upper and lower nozzle are used for charging the raw material gas toward the upper part of the silicon bar and a lower nozzle for charging it toward the lower part, respectively, to provide a smooth surface and an uniform thickness.
Patent
Polycrystalline silicon manufacturing apparatus
TL;DR: In this paper, a polycrystalline silicon manufacturing apparatus is provided which supplies raw gas to the inside of a reaction furnace and supplies a current from an electrode to a silicon seed rod.
Patent
Production of high-purity polycrystal silicon
Makoto Kuramoto,Takayuki Nakai +1 more
TL;DR: In this paper, the authors proposed a method to improve production efficiency by passing H 2 along the inner wall surface of a reaction vessel and specifying the ratio of the height of the fluidized bed contg. Si grains to the inner diameter of the reaction vessel.