Patent
Method for pattern defect correction of a photomask
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TLDR
In this paper, a pattern defect correction method of a photomask includes the steps of directing a focused ion beam to scan a small region including a pattern defects after a planarization film is formed on a region including pattern defect of a phase shift mask to etch the small region.Abstract:
A pattern defect correction method of a photomask includes the steps of directing a focused ion beam to scan a small region including a pattern defect after a planarization film is formed on a region including a pattern defect of a phase shift mask to etch the small region. By monitoring a change in the intensity of a secondary signal, the end of an etching process is detected, followed by removal of the planarization film. According to this method, a pattern defect of a phase shift mask which is used in manufacturing an LSI can be corrected in high precision.read more
Citations
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Patent
Photolithography mask repair
TL;DR: In this paper, the authors used a charged particle beam to etch a defect using three-dimensional information derived from two charged particle beams images of the defect from different angles, and then used this information to reconstruct the original mask.
Patent
Method and apparatus for reticle inspection using aerial imaging
TL;DR: In this paper, a reticle inspection system for inspecting reticles can be used as an incoming inspection tool, and as a periodic and pre-exposure inspection tool for mask shops.
Patent
Alternating phase-shift mask inspection method and apparatus
Abstract: A reticle inspection system and method for complete and fast inspection of phase shift mask reticles, both for incoming inspection and for periodic and pre-exposure inspection tool, is employable by facilities such as mask shops as an inspection tool compatible to the mask shop's customers. The inventive system and method detect phase errors in an aerial image by acquiring the image of the phase shift mask under the same optical conditions as the exposure conditions (i.e. wavelength, numerical aperture, sigma, and illumination aperture type). Images are acquired at a positive out-of-focus and a negative out-of-focus, and are compared in order to enhance possible phase error. The term “phase error” refers to the acceptable range of the phase deviation from the programmed 180° on the phase shift mask, by using the exposure system to achieve the image on the photoresist, satisfying the requirements of the wafer specification.
Patent
Mask defect repair system and method
TL;DR: In this article, a mask defect repair system which repairs, by irradiating a particle beam, a defect on a mask made of a transparent substrate and a mask material formed on the substrate, includes an imaging beam irradiation unit for two-dimensional scanning and irradiating the beam for imaging on a surface of the mask.
Patent
Method for repairing MoSi attenuated phase shift masks
TL;DR: In this paper, a focused ion beam (FIB) is used to remove ion stains produced by the FIB to repair an opaque defect on a MoSi phase shifting template.
References
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Patent
Original plate to be projected for use in transmission
TL;DR: In this paper, the authors proposed a phase-regulating member in the transparent part of the original plate to provide a specified phase regulating member in order to provide an original plate high in resolution.
Patent
Correction of lithographic masks
TL;DR: In this article, an ion beam is used for imaging the defect, typically by detection of secondary electrons or photons emitted where the ion beam impinges on the mask, and then the substrate is rendered opaque.
Patent
Method and apparatus for correcting defects of x-ray mask
Hiroshi Yamaguchi,Keiya Saito,Mitsuyoshi Koizumi,Akira Shimase,Haraichi Satoshi,Takeoki Miyauchi,Shinji Kuniyoshi,Susumu Aiuchi +7 more
TL;DR: In this article, the authors proposed a method and apparatus for correcting defects of an X-ray mask comprising the steps of irradiating a focused ion beam to at least a region having a defective portion.
Patent
Method of correcting defect in circuit pattern
Hiroshi Yamaguchi,Keiya Saito,Akira Shimase,Haraichi Satoshi,Aiuchi Susumu,Akiyama Nobuyuki,Kuniyoshi Shinji,Kimura Tsuyoshi +7 more
TL;DR: In this article, a method of correcting a dropout defective portion in the circuit pattern of an X-ray mask was proposed. But this method was not suitable for the case of a high-intensity focused ion beam.
Patent
Method for correcting pattern defect
TL;DR: In this paper, the authors proposed a method to prevent new occurrence of a defect due to reattachment at the time of sputter etching of an excessive metal film defect by coating and protecting the surface of a pattern adjacent to the defect with an organic film.