Patent
Method for producing reverse staggered type silicon thin film transistor
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TLDR
In this paper, a reverse staggered type silicon thin film transistor was proposed, which consists of a gate insulating layer on a substrate having a gate electrode and a transistor-forming portion.Abstract:
A method for producing a reverse staggered type silicon thin film transistor includes the steps of forming a gate insulating layer on a substrate having a gate electrode, the gate insulating layer having a transistor-forming portion; forming an intrinsic silicon film on the transistor-forming portion of the gate insulating layer; forming an n-type silicon layer on the intrinsic silicon layer; forming a source electrode on the n-type silicon layer; forming a drain electrode on the n-type silicon layer; forming a resist layer on the source electrode and drain electrode and having the same shape thereof; subsequently removing a portion of the n-type silicon layer by using the resist layer as a mask, such that there remains a predetermined thickness of the n-type silicon layer; and doping the predetermined thickness of the n-type silicon layer with p-type impurities by using the resist layer as a mask.read more
Citations
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A single chamber CVD process for thin film transistors
TL;DR: In this paper, a method of depositing layers (54, 56) of intrinsic amorphous silicon and doped ammorphous silicon sequentially on a substrate (50) in the same CVD chamber without incurring a dopant contamination problem was proposed.
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Semiconductor device and process for manufacturing the same, and electronic device
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TL;DR: In this article, an opening for separating elements is formed in self-alignment by making use of a pattern of electrodes, which eliminates the patterning margin which might otherwise be required for the element separation.
References
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Patent
Active matrix display with capacitive light shield
TL;DR: In this paper, an active matrix type display apparatus is presented, which includes a first electrode substrate having a transparent insulation substrate on which a thin film transistor is driven by the thin file transistor and a connecting portion for connecting the transistor with the transparent display pixel electrode.
Patent
Thin film silicon semiconductor device and process for producing thereof
TL;DR: In this article, a thin polycrystalline silicon semiconductor device with a lattice constant smaller than that of a silicon single crystal and a small crystal grain size is described.
Patent
Thin film transistors
TL;DR: In this article, an ion implantation or diffusion on phased deposition is used to create an enhanced conductivity layer in the semiconductor by ion implantations or diffusion, which is obtained without the conventional annealing step and stability is much improved.
Patent
Thin film transistor
TL;DR: In this paper, the authors proposed to make characteristics of a mass display element stable by screening semiconductor element portions as well as source and drain electrode portions by insulated films, which made characteristics of mass display elements stable.
Patent
Amorphous silicon thin film transistor and method of manufacturing the same
TL;DR: In this article, a method for manufacturing a amorphous silicon thin film transistor comprises exposing an morphous silicon layer situated between a source electrode and a drain electrode to a gas phase atmosphere having a gas containing an impurity forming an acceptor.