Patent
Method for the manufacture of phase shifting masks for EUV lithography
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TLDR
In this paper, a method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance.Abstract:
A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.read more
Citations
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Patent
EUV mask and method for repairing an EUV mask
TL;DR: In this paper, the authors proposed a method for repairing an EUV mask including a substrate, a reflective multilayer on the substrate and at least one defect beneath or within the multi-layer.
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Method of evaluating optical element
TL;DR: In this article, an evaluation method of a reflective optical element on which a multilayer film is formed is provided, including the step of calculating a phase difference between light incident upon the multi-layer film and light reflected from the multillayer film using a standing wave produced when introducing light with a wavelength of 2 to 40 into the optical element.
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Multilayer-film reflective mirror, exposure apparatus, device manufacturing method, and manufacturing method of multilayer-film reflective mirror
TL;DR: In this paper, a multilayer-film reflective mirror is disclosed, which consists of a base and a multi-layer film formed on the base, where each layer pair includes a respective first layer and a respective second layer, wherein the first and second layers are laminated together in an alternating manner.
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Apparatus and method for measuring aerial image of EUV mask
Donggun Lee,Seong-Sue Kim +1 more
TL;DR: In this article, the authors present an apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the UEV mask and adapted to focus EUV light on a portion of the EEV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV masks.
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Adjustable mask blank structure for an EUV phase-shift mask
TL;DR: In this paper, a method of forming an optical compound, consisting of: a) the formation of a multilayer stack (32, 34) comprising an adjustment layer (30) that is made from a metal/semiconductor mixture which is formed in or on the stack; b) the etching of part of the multi-layer stack including at least part of adjustment layer; and c) annealing step in order to contract the adjustment layer by less than 1 nm.
References
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Patent
Repair of localized defects in multilayer-coated reticle blanks for extreme ultraviolet lithography
TL;DR: In this article, a method for repairing defects in a multilayer coating layered onto a reticle blank used in an extreme ultraviolet lithography (EUVL) system is provided, using high lateral spatial resolution.
Patent
Attenuated phase shift mask for use in EUV lithography and a method of making such a mask
TL;DR: In this article, an attenuated phase shift mask utilizes a multilayer which has been locally modified to provide different reflective characteristics, such as heat treatment or e-beam treatment.
Patent
Photolithographic mask fabrication
TL;DR: In this article, a photolithographic mask is used in photolithography imaging system for patterning a semiconductor wafer, and an absorber is selectively etched to form mask features.
Patent
Reflection type mask and manufacture of microdevices using the same
Akira Miyake,Yutaka Watanabe +1 more
TL;DR: In this paper, a phase shifter for changing the phase of reflected light by π can be provided by heating a multilayered mask to 100 deg. (°C) or a few hundred deg.