Method of manufacturing a semiconductor device

TLDR: In this article, the authors used a substrate body comprising a semiconductor substrate having a cell region for forming a memory cell portion and a circuit region, in which a diffusion layer is formed to the substrate in the circuit region and a first interlayer insulation film is formed on the substrate substrate.

Abstract: The manufacturing method uses a substrate body comprising a semiconductor substrate having a cell region (1) for forming a memory cell portion and a circuit region (2) for forming a peripheral circuit portion, in which a diffusion layer is formed to the semiconductor substrate in the circuit region (2) and a first interlayer insulation film is formed on the semiconductor substrate, and comprises conducting a step of forming a peripheral circuit including a step of forming a connection hole through a first interlayer insulation film in the circuit region (2) so as to expose the diffusion layer at the bottom, a step of ion implanting impurities to the diffusion layer in the vicinity of the bottom of the connection hole and a step of conducting a heat treatment for activating the impurities introduced into the diffusion layer. Subsequently, a cell region processing step having a step of forming a capacitor on the substrate body in the cell region (1) is conducted. A highly dielectric material is used for the material of the dielectric film of the capacitor, so that the capacity of the capacitor is not lowered even if the compensating diffusion layer is formed in the step of forming the peripheral circuit.