Patent
Method of mending a defect in a phase shift pattern
TLDR
In this paper, a method to mend a black defect and a white defect of a phase shift mask pattern so that the mended mask pattern has an accurately defined pattern has been proposed.Abstract:
A method to mend a black defect and a white defect of a phase shift mask pattern so that the mended phase shift mask pattern has an accurately defined pattern. In the vicinity of a black defect and the area around the same, a mending phase shifter is formed into a thickness twice as large as the thickness d of a phase shifter. All light beams through a black defect area are nearly 0 degree out of phase with a non-phase-shifted light beam, thereby the phase shift mask pattern having the black defect becoming a phase shift mask pattern with an accurately defined pattern. In a similar manner, every light beam through a white defect area is nearly 180 degree out of phase with a non-phase-shifted light beam. As a result, a mended phase shift mask pattern has an accurately defined pattern.read more
Citations
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TL;DR: In this paper, a method for repairing defects in a photolithographic mask for use in patterning semiconductor wafers introduces a pre-selected phase error selected to sum with a phase error of a defect repair material, yielding a desired composite phase error relative to light passing through the substrate alone.
References
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Patent
Process for producing a phase shift layer-containing photomask
Hiroshi c,o Dai Nippon Fujita,Masaaki c,o Dai Nippon Kurihara,Koichi c,o Dai Nippon Mikami,Hiroyuki c,O Dai Nippon Print. Co. Ltd Miyashita,Yoichi c,o Dai Nippon Takahashi +9 more
TL;DR: In this paper, a photomask blank for preparing a reticle for use in the production of integrated circuits comprises a substrate 30, an electrically conductive layer 31, a light-shielding thin film 32 and an ionizing radiation resist 33 formed of a coated spin-on-glass layer.
Patent
Method for correcting phase shift part of phase shift mask
TL;DR: In this article, the white defect of a phase shift mask is corrected by applying SOG, irradiating only the white defective part with energy and turning the part into SiO2.
Patent
Manufacture of fresnel zone plate for focusing x-ray
TL;DR: In this article, a shifter pattern is formed on a photomask for inverting a phase of an exposure light at 180 degrees, which can be used for manufacturing a Fresnel zone plate with high resolution.