Journal ArticleDOI
Modelling of silicon epitaxy at low pressure
TLDR
In this paper, a model for simulating the growth rate of epitaxial silicon in the vapour phase by pyrolysis of SiH4 in a horizontal reactor in the pressure range 10-500 Torr has been developed.About:
This article is published in Thin Solid Films.The article was published on 1994-03-01. It has received 1 citations till now. The article focuses on the topics: Reaction rate & Reaction rate constant.read more
Citations
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Journal ArticleDOI
Low temperature Si epitaxy in a vertical LPCVD batch reactor
TL;DR: In this paper, the authors present a new process solution in a vertical low-pressure chemical vapor deposition reactor allowing low cost batch processing for deposition of thin Silicon epitaxial layers at temperatures not exceeding 800°C.
References
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Book
A User's Guide to Vacuum Technology
John F. O’Hanlon,John L. Vossen +1 more
TL;DR: In this paper, the authors present an interpretation of RGA data and present an analysis of the properties of the RGA Data, including the following: Units and Constants, Gas Properties, and Cracking Patterns.
Journal ArticleDOI
Modeling and Analysis of Low Pressure CVD Reactors
Klavs F. Jensen,David B. Graves +1 more
TL;DR: In this article, a detailed mathematical model for the hot wall multiple-disk-in-tube LPCVD reactor is developed by using reaction engineering concepts, which includes the convective and diffusive mass transport in the annular flow region formed by the reactor wall and the edges of the wafers as well as the surface reactions on the reaction wall.
Journal ArticleDOI
Kinetics of Silicon Growth under Low Hydrogen Pressure
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