Patent
Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures
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TLDR
A transistor having a plurality of divided emitter regions was proposed in this article, which provides a more uniform distribution of junction temperatures than a transistor with a single emitter region, where the spacing between adjacent regions at the central portion of the transistor is greater than that between adjacent peripheral regions.Abstract:
A transistor having a plurality of divided emitter regions. The spacing between adjacent emitter regions at the central portion of the transistor is greater than that between adjacent peripheral emitter regions. This arrangement provides a more uniform distribution of junction temperatures. The structure finds particular utility in power transistors.read more
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Journal ArticleDOI
Optimum design for a thermally stable multifinger power transistor
TL;DR: In this article, the thermal stability of multifinger bipolar transistors has been analyzed theoretically and coupled equations are solved to study the onset of instability and its dependence on the distributions of ballasting resistors.
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