Patent
Nonvolatile memory device and method of manufacturing the same
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TLDR
In this article, the memory cells are arranged at intersection points of a plurality of first metal wirings extending along a first direction with a second metal wire length orthogonal to the first direction, and voids are formed in the interlayer film provided between the adjacent memory elements.Abstract:
Provided is a nonvolatile memory device including a phase-change memory configured with cross-point memory cells in which memory elements formed of a phase-change material and selection elements formed with a diode are combined. A memory cell is configured with a memory element formed of a phase-change material and a selection element formed with a diode having a stacked structure of a first polycrystalline silicon film, a second polycrystalline silicon film, and a third polycrystalline silicon film. The memory cells are arranged at intersection points of a plurality of first metal wirings extending along a first direction with a plurality of third metal wirings extending along a second direction orthogonal to the first direction. An interlayer film is formed between adjacent selection elements and between adjacent memory elements, and voids are formed in the interlayer film provided between the adjacent memory elements.read more
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Semiconductor device, and manufacturing method of the same
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Patent
Cross-point memory and methods for fabrication of same
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References
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Patent
Resistance change memory device
Haruki Toda,Koichi Kubo +1 more
TL;DR: A resistance change memory device as discussed by the authors is a memory cell array with memory cells arranged therein, the memory cell having a variable resistance element for storing a rewritable resistance value; a reference cell formed of the same memory cells as those set in a high resistance state in the array, the reference cell being trimmed with selection of the number of parallel-connected memory cells to have a reference current value used for detecting data in the memory cells array.
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Self-aligned, programmable phase change memory
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Patent
Modified contact for programmable devices
Stephen J. Hudgens,Tyler Lowrey +1 more
TL;DR: In this paper, an aspect is provided such that an opening is formed through a dielectric exposing a contact formed on a substrate, which is modified by implanting ions into the contact, depositing a material on the contact and treating the contact with plasma.
Patent
Semiconductor memory device
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Semiconductor memory cell and method of forming same
TL;DR: In this article, a semiconductor memory cell and forming method thereof utilizes a vertical select transistor to eliminate the problem of a large cell surface area in memory cells of the related art utilizing phase changes.