Journal ArticleDOI
On the induced charge in semiconductor detectors
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TLDR
In this paper, the induced charge in an ionization chamber is represented by DELTA q = e DELTA x/d (1) or DELTA Q =e DELTA V/V (2) where V = voltage across the device, d = spacing between electrodes, and DELTA v = potential difference between two points spaced DELTA X along the path of the charge e.About:
This article is published in Nuclear Instruments and Methods.The article was published on 1963-01-01. It has received 109 citations till now. The article focuses on the topics: Delta-v (physics) & Space charge.read more
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Charge collection scanning electron microscopy
TL;DR: A review of the application of the scanning electron microscope to the study and characterization of semiconductor materials and devices by the Electron Beam Induced Conductivity (EBIC) method can be found in this paper.
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Drift velocity of electrons and holes and associated anisotropic effects in silicon
TL;DR: In this article, the drift velocity of electrons and holes in high purity silicon has been measured, with the time of flight technique, as a function of electric field (0·1−50 KV/cm) at several temperatures between 77 and 300°K.
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Development of transient current and charge techniques for the measurement of effective net concentration of ionized charges (Neff) in the space charge region of p-n junction detectors☆
TL;DR: Transient current and charge techniques (TCT/TChT) have been developed as alternatives to the standard C-V measurements for measurements of the effective net concentration of ionized charges (Neff) in the space charge region (SCR) of Si p-n junction detectors, especially for heavily irradiated detectors.
Journal ArticleDOI
Extension of Ramo's theorem as applied to induced charge in semiconductor detectors☆
TL;DR: In this paper, a proof of the extended Ramo's theorem is given, in order to clarify the matter, the simple case of a unidimensional problem relevant to semiconductor detectors is fully discussed.
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Journal ArticleDOI
Currents Induced by Electron Motion
TL;DR: In this article, the instantaneous current induced in neighboring conductors by a given specified motion of electrons is computed based on the repeated use of a simple equation giving the current due to a single electron's movement.