Journal ArticleDOI
On the variation of cut-off frequency at high injection level with emitter end concentration of a diffused base transistor
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This article is published in Solid-state Electronics.The article was published on 1974-10-01. It has received 4 citations till now. The article focuses on the topics: Heterostructure-emitter bipolar transistor & Transistor.read more
Citations
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Journal ArticleDOI
An approximate model for the graded-base transistor
TL;DR: In this article, a one-dimensional analytical model for the graded-base transistor was proposed, which combines with the Fletcher boundary conditions and the ambipolar approach, yielding a one dimensional analytical model.
Journal ArticleDOI
The effect of dopant distribution and built-in electric field on the transit time of a transistor
Journal ArticleDOI
The effect of spatial variation of mobility on the input conductance and base charging capacitance of a diffused base transistor
TL;DR: In this paper, the effect of mobility degradation at high impurity concentrations on the input conductance and the base charging capacitance of a diffused base transistor with exponential impurity profile in the base region at any injection level has been considered.
Book ChapterDOI
Bipolar Junction Transistors
TL;DR: In this article, the energy diagram for an npn transistor without bias is given in Fig. 4.1(a), with forward bias on the emitter-base junction, electrons are injected into the base and by diffusion make their way to the base-collector region which is reverse-biased so that the electric field in the depletion region aids the collection.
References
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Journal ArticleDOI
Carrier mobilities in silicon empirically related to doping and field
D.M. Caughey,R.E. Thomas +1 more
TL;DR: In this article, the experimental dependence of carrier mobilities on doping density and field strength in silicon has been investigated and the curve-fitting procedures are described, which fit the experimental data.
Journal ArticleDOI
Determination of physical parameters of diffusion and drift transistors
M.B. Das,A.R. Boothroyd +1 more
TL;DR: In this article, the effects of drift and diffussion transistors under both low and high-level injection conditions in terms of the excess carrier charge in the base region were investigated.
Journal ArticleDOI
The high-injection-level operation of drift transistors
J. Lindmayer,C. Wrigley +1 more
TL;DR: In this article, the minority-charge distribution in the base region of the drift transistor by a one-dimensional theoretical model results in an Abel-type differential equation which has no analytical solution.
Journal ArticleDOI
The Characteristic Frequencies of a Drift Transistor
TL;DR: In this paper, the authors used the theory of the simple one-dimensional model to find the frequency variation of the current gain of a drift transistor, and used this to find how junction capacitances and base resistance affect the measurement of the characteristic frequencies.
Journal ArticleDOI
On the variation of cut-off frequency with emitter end concentration of a diffused base transistor
TL;DR: In this article, the effect of mobility degradation at high impurity concentrations on the cut-off frequency of a diffused base transistor with exponential impurity profile in the base has been considered analytically.