Proceedings ArticleDOI
Parametric analysis of memristive switching mechanism
Indhu Kanth,Sonal Singhal +1 more
- pp 1-6
TLDR
In this article, the authors present a theoretical approach to deal with the understanding of parameters making a memristor and controlling it as a switch and also to identify various issues related to its physical realization.Abstract:
With the Moore's law drawing in a saturation limit closer for our current technologies in the semiconductor field, the need for efficient technologies better than the present majorly in terms of energy, speed and storage is growing loud every day. Unexpectedly, the key to this solution comes from the past. Memristor thus became the pioneers for opening of such a possibility. A linear ion drift model of memristor was realized along with a memristor based imply logic gate. The analysis were then carried on various parameters affecting its characteristics such as excitation frequency, drift ion mobility, resistances, state function, electrode size and choice of electrode material. This paper presents a theoretical approach to deal with the understanding of parameters making a memristor and controlling it as a switch and also to identify various issues related to its physical realization.read more
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal Article
SPICE Model of Memristor with Nonlinear Dopant Drift
TL;DR: It is shown that the hitherto published approaches to the modeling of boundary conditions need not conform with the requirements for the behavior of a practical circuit element, and the described SPICE model of the memristor is constructed as an open model, enabling additional modifications of non-linear boundary conditions.
Journal ArticleDOI
Exponential ionic drift: fast switching and low volatility of thin-film memristors
TL;DR: In this paper, the authors investigate the exponential dependence of switching speeds in thin-film memristors for high electric fields and elevated temperatures, and propose a nonlinear ionic drift model to predict the volatility and switching time for various material systems.
Posted Content
Fundamental Issues and Problems in the Realization of Memristors
Paul Meuffels,R. Soni +1 more
TL;DR: In this article, the HP-memristor device must fail as this relation violates by itself Landauer's principle of the minimum energy costs for information processing, which is violated by the coupling of diffusion currents at the boundary between two regions, thus violating the essential requirement on a genuine memristor.
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