Open AccessJournal Article
SPICE Model of Memristor with Nonlinear Dopant Drift
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TLDR
It is shown that the hitherto published approaches to the modeling of boundary conditions need not conform with the requirements for the behavior of a practical circuit element, and the described SPICE model of the memristor is constructed as an open model, enabling additional modifications of non-linear boundary conditions.Abstract:
A mathematical model of the prototype of memristor, manufactured in 2008 in Hewlett-Packard Labs, is described in the paper. It is shown that the hitherto published approaches to the modeling of boundary conditions need not conform with the requirements for the behavior of a practical circuit element. The described SPICE model of the memristor is thus constructed as an open model, enabling additional modifications of non-linear boundary conditions. Its functionality is illustrated on computer simulations.read more
Citations
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Journal ArticleDOI
Memory effects in complex materials and nanoscale systems
TL;DR: The memory properties of various materials and systems which appear most strikingly in their non-trivial, time-dependent resistive, capacitative and inductive characteristics are described within the framework of memristors, memcapacitors and meminductors.
Journal ArticleDOI
TEAM: ThrEshold Adaptive Memristor Model
TL;DR: It is shown that the proposed TEAM, ThrEshold Adaptive Memristor model is reasonably accurate and computationally efficient, and is more appropriate for circuit simulation than previously published models.
Journal ArticleDOI
VTEAM: A General Model for Voltage-Controlled Memristors
TL;DR: The VTEAM model extends the previously proposed ThrEshold Adaptive Memristor (TEAM) model, which describes current-controlled memristors and has similar advantages as the TEAM model, i.e., it is simple, general, and flexible, and can characterize different voltage-controlled Memristors.
Journal ArticleDOI
Practical Approach to Programmable Analog Circuits With Memristors
Yuriy V. Pershin,M. Di Ventra +1 more
TL;DR: An approach to use memristors (resistors with memory) in programmable analog circuits in which low voltages are applied to memristor during their operation as analog circuit elements and high voltage are used to program the Memristor's states.
Journal ArticleDOI
Memristor-Based Material Implication (IMPLY) Logic: Design Principles and Methodologies
TL;DR: The IMPLY logic gate, a memristor-based logic circuit, is described and a methodology for designing this logic family is proposed, based on a general design flow suitable for all deterministic memristive logic families.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
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Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
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The elusive memristor: properties of basic electrical circuits
TL;DR: In this paper, the properties of a single memristor, as well as ideal memristors in series and parallel, are presented, and simple models are presented which show that these unusual properties are closely related to the internal dynamics of the Memristor's internal dynamics.
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The elusive memristor: properties of basic electrical circuits
TL;DR: In this paper, the properties of a single memristor, memristors in series and parallel, as well as ideal MC, MCL and MCL circuits are discussed.
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How We Found The Missing Memristor
TL;DR: A memristor is a two-terminal memory resistor whose resistance depends on the voltage applied to it and the length of time that voltage has been applied as discussed by the authors, i.e., when the voltage is turned off, the memory resistor remembers its most recent resistance until the next time it is turned on.