Patent
Photolithography process with multiple exposures
TLDR
In this article, a photomask is placed and aligned above a wafer having a photoresist formed thereon at a predetermined distance, and multiple exposures are sequentially performed on the photoresists through the photomasks.Abstract:
A photolithography process with multiple exposures is provided. A photomask is placed and aligned above a wafer having a photoresist formed thereon at a predetermined distance. Multiple exposures are sequentially performed on the photoresist through the photomask. Each of the multiple exposures is provided with a respective illuminating setting that is optimized for one duty ratio of the photomask. Thereby, an optimum through-pitch performance for pattern transfer from the photomask unto the photoresist is obtained. Then, a development is performed on the photoresist.read more
Citations
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Patent
Method for photolithography using multiple illuminations and a single fine feature mask
Michael Fritze,Brian Tyrrell +1 more
TL;DR: In this article, a feature pattern on a substrate by exposing the substrate, using a mask having a pattern of features thereon, with illumination having a first set of settings, is presented.
Patent
Double exposure method and photomask for same
TL;DR: In this article, a double exposure method was proposed to form first and second patterns on a cell region and a peripheral circuit region of a wafer, respectively, by using a single photomask together with different illuminating systems.
Patent
Method and system for printing lithographic images with multiple exposures
TL;DR: In this paper, a system and method for breaking a design to be printed into two or more exposures, each of which has at least the minimum pitch, is described, together with a method to print a design that could not be printed in one exposure alone.
Patent
Imaging post structures using x and y dipole optics and a single mask
TL;DR: In this paper, a 2D post pattern with a pitch of approximately 70-150 nm was formed in a layer beneath the photo-sensitive layer using 157-193 nm UV light, and hyper-numerical aperture optics.
Patent
Lithography process optimization and system
TL;DR: In this paper, the aperatures from the multiple exposure system can be combined into a single aperture by adding the apertures and modulating the relative transmission through the respective aperture to match the prescribed dose split determined in above in the first embodiment.
References
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Patent
Projection-exposing apparatus with deflecting grating member
TL;DR: In this article, the diffraction grating member is defined in the relation PG =2PR, where PG is defined as the distance from the pattern on the mask by a distance Δt, where Δt ≧PG /2NAIL, NAIL being the numerical aperture of the illumination optical system.
Patent
Exposure method and exposure apparatus
TL;DR: An exposure method for forming on a wafer coated with a photo resist device pattern comprised of dense patterns and isolated patterns as components was proposed in this article, where a first step consisted of transferring first patterns comprised of the dense patterns of shapes corresponding to the device patterns and a plurality of auxiliary patterns on the wafer by ½ of the appropriate amount of exposure as determined by the sensitivity of the photo resist.