PIR security sensors: developing the next generation

TLDR: It will be reasoned that three competing technologies have the potential to be successful in the short term: silicon resistance and diode microbolometers (two options of the former), and an update will be given on the development at Electro-optic Sensor Design of amorphous silicon microbolometer security sensor technology employing non-evacuated packaging and plastic optics.

Abstract: Passive infrared (PIR) security sensors employ decades old pyroelectric technology for short range detection. This ubiquitous technology serves a major market which receives little attention in the international IR forum. It is, however, a market ripe for exploitation using modern IR sensor technology. In this paper a review will be made of various IR technologies, as applied to this application. It will be reasoned that three competing technologies have the potential to be successful in the short term: silicon resistance and diode microbolometers (two options of the former). An update will also be given on the development at Electro-optic Sensor Design (EOSD) of amorphous silicon microbolometer security sensor technology employing non-evacuated packaging and plastic optics. Establishment of a new generation PIR security sensor technology also paves the way for high performance low cost IR sensors for numerous short range applications.