scispace - formally typeset
Patent

Plasma process employing multiple zone gas distribution for improved uniformity of critical dimension bias

Dan Katz, +7 more
Reads0
Chats0
TLDR
In this paper, the radial distribution of critical dimension bias on the wafer is controlled by flow rate of passivation gas to the edge of a wafer, where a passivation species precursor gas is furnished to an inner zone at a first flow rate, while flowing an etchant species precursors to an annular intermediate zone at the second flow rate.
Abstract: 
A passivation species precursor gas is furnished to an inner zone at a first flow rate, while flowing an etchant species precursor gas an annular intermediate zone at a second flow rate. Radial distribution of etch rate is controlled by the ratio of the first and second flow rates. The radial distribution of etch critical dimension bias on the wafer is controlled by flow rate of passivation gas to the wafer edge.

read more

Citations
More filters
Patent

Semiconductor processing system and methods using capacitively coupled plasma

Jang-Gyoo Yang, +6 more
TL;DR: In this paper, a capacitively coupled plasma (CCP) unit is described inside a process chamber, and a pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
Patent

Semiconductor processing systems having multiple plasma configurations

Dmitry Lubomirsky, +2 more
TL;DR: In this paper, the authors describe a system that includes a first plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access.
Patent

Smooth siconi etch for silicon-containing films

Jing Tang, +2 more
TL;DR: In this article, a SiConi etch with a greater or lesser flow ratio of hydrogen compared to fluorine was proposed to reduce roughness of the post-etch surface and to reduce the difference in etch rate between densely and sparsely patterned areas.
Patent

Methods for etch of metal and metal-oxide films

Jingchun Zhang, +2 more
TL;DR: In this paper, a method of selectively etching a metal-containing film from a substrate comprising a metal containing layer and a silicon oxide layer is proposed, which involves flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorinecontaining gas to generate a plasma in the plasma generation area.
Patent

Substrate processing apparatus and substrate processing method

Hiroyuki Ogawa, +2 more
TL;DR: In this paper, a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate is described, which includes a partition unit between a processing space where a substrate is provided and a diffusion space where the first gas is diffused, to face the mounting table.
References
More filters
Patent

Method for controlling etch uniformity

Michael Barnes, +4 more
TL;DR: In this paper, a method for processing a semiconductor substrate, where the method includes positioning a substrate in a processing chamber having at least a first and second coils positioned above the substrate and supplying a first electrical current to the first coil.
Patent

Method to control uniformity using tri-zone showerhead

Rodolfo P. Belen, +5 more
TL;DR: In this paper, the authors present an apparatus for processing a substrate with increased uniformity, consisting of a chamber body defining a processing volume, a substrate support disposed in the processing volume opposite to the substrate support, and a plasma generation assembly configured to ignite a plasma from the processing gases.