Patent
Position sensor including a thin film indium arsenide magnetoresistor on a permanent magnet
TLDR
In this paper, an improved position sensor includes a magnetic circuit in which the stationary portion includes a permanent magnet whose width is optimally 1.5 times the tooth pitch of the exciter portion of the sensor.Abstract:
For increased sensitivity, an improved position sensor includes a magnetic circuit in which the stationary portion includes a permanent magnet whose width is optimally 1.5 times the tooth pitch of the exciter portion of the sensor and the magnet face proximate the exciter includes a thin layer of ferromagnetic material over which is centered a narrow magnetic sensing element, such as a magnetoresistor. The sensing element has a width typically less than the tooth width. The sensing element includes a thin film of a monocrystalline semiconductive material, preferably having only a moderate bulk mobility and a larger band gap, such as indium arsenide. Current carriers flow along the length of the thin film in a surface accumulation layer, effective to provide a significant apparent increase in mobility and conductivity of said semiconductive material, and an actual increase in magnetic sensitivity and temperature insensitivity. The flux density is typically applied by appropriate magnet thickness or choice of magnet material without the need of a flux guide.read more
Citations
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Patent
Position sensor, designed in particular for detecting a steering column torsion
TL;DR: In this paper, a position sensor for detecting steering column torsion is proposed, consisting of a first magnetic structure including a plurality of magnets and a second magnetic structure consisting of two ferromagnetic rings.
Patent
Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer
TL;DR: In this article, a magnetic field sensor is described that has a 0.25-0.6 micrometer thick magnetically active layer of very high electron mobility that consists essentially of epitaxial indium antimonide.
Patent
Magnetic field sensor on elemental semiconductor substrate with electric field reduction means
TL;DR: In this paper, a magnetic field sensor with an active layer of indium antimonide or indium arsenide supported on an elemental semiconductor substrate is described, and means are described for providing reduced electric fields and parasitic conduction in the substrate.
Patent
Apparatus for sensing position and/or torque
Eric D. Pattok,Mohammad S. Islam,Matthew W. Mielke,Sainan Feng,Ryan J. Pavlawk,Tomy Sebastian,Christian E. Ross +6 more
TL;DR: In this paper, the first and second stator plates form a gap between the lower surface of the first stator plate and the upper surface of a second plate, and a sensing device is disposed within the gap for sensing a magnetic flux of the magnetic field.
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Method for embedding wires within a powder metal core and sensor assembly produced by such a method
TL;DR: In this article, a semiconductor magnetoresistive sensor and a method for its assembly is presented, which is compatible with automated semiconductor chip placement and packaging technology, so as to alleviate the previous requirement that the semiconductor sensing element be separately packaged.
References
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Journal ArticleDOI
Integrated semiconductor magnetic field sensors
Henry Baltes,Radivoje Popovic +1 more
TL;DR: In this article, the authors present a review of magnetic field sensors based on III-V semiconductors, including Hall plates, magnetic field effect transistors, vertical and lateral bipolar magnetotransistors, magnetodiodes, and current domain magnetometers.
Journal ArticleDOI
Transport coefficients of InAs epilayers
TL;DR: In this article, a degenerate surface accumulation of electrons is attributed to a two-layer model, one with bulklike and the other with surfacelike charge carrier transport coefficients.
Journal ArticleDOI
Growth and transport properties of InAs epilayers on GaAs
TL;DR: A series of InAs epitaxial layers with thicknesses ranging from 0.5 up to 6.2 μm was grown on (100) oriented semi-insulating GaAs substrates by molecular beam epitaxy as mentioned in this paper.