Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.

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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

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A comprehensive review of zno materials and devices

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

A quantized Hall plateau of ${\ensuremath{\rho}}_{\mathrm{xy}}=\frac{3h}{{e}^{2}}$, accompanied by a minimum in ${\ensuremath{\rho}}_{\mathrm{xx}}$, was observed at $Tl5$ K in magnetotransport of high-mobility, two-dimensional electrons, when the lowest-energy, spin-polarized Landau level is $\frac{1}{3}$ filled. The formation of a Wigner solid or charge-density-wave state with triangular symmetry is suggested as a possible explanation.

https://link.aps.org/pdf/10.1103/PhysRevLett.48.1559

Two-Dimensional Magnetotransport in the Extreme Quantum Limit

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs The typical output power was 1500 μW and the external quantum efficiency was as high as 27% at a forward current of 20 mA at room temperature The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively This value of luminous intensity was the highest ever reported for blue LEDs

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high‐temperature electronics and short‐wavelength optical applications are compared. The outstanding thermal and chemical stability of SiC and GaN should enable them to operate at high temperatures and in hostile environments, and also make them attractive for high‐power operation. The present advanced stage of development of SiC substrates and metal‐oxide‐semiconductor technology makes SiC the leading contender for high‐temperature and high‐power applications if ohmic contacts and interface‐state densities can be further improved. GaN, despite fundamentally superior electronic properties and better ohmic contact resistances, must overcome the lack of an ideal substrate material and a relatively advanced SiC infrastructure in order to compete in electronics applications. Prototype transistors have been fabricated from both SiC and GaN, and the microwave characteristics and high‐temperature performance of SiC transistors have been studied. For optical emitters and detectors, ZnSe, SiC, and GaN all have demonstrated operation in the green, blue, or ultraviolet (UV) spectra. Blue SiC light‐emitting diodes (LEDs) have been on the market for several years, joined recently by UV and blue GaN‐based LEDs. These products should find wide use in full color display and other technologies. Promising prototype UV photodetectors have been fabricated from both SiC and GaN. In laser development, ZnSe leads the way with more sophisticated designs having further improved performance being rapidly demonstrated. If the low damage threshold of ZnSe continues to limit practical laser applications, GaN appears poised to become the semiconductor of choice for short‐wavelength lasers in optical memory and other applications. For further development of these materials to be realized, doping densities (especially p type) and ohmic contact technologies have to be improved. Economies of scale need to be realized through the development of larger SiC substrates. Improved substrate materials, ideally GaN itself, need to be aggressively pursued to further develop the GaN‐based material system and enable the fabrication of lasers. ZnSe material quality is already outstanding and now researchers must focus their attention on addressing the short lifetimes of ZnSe‐based lasers to determine whether the material is sufficiently durable for practical laser applications. The problems related to these three wide‐band‐gap semiconductor systems have moved away from materials science toward the device arena, where their technological development can rapidly be brought to maturity.

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

The status of research on both wurtzite and zinc‐blende GaN, AlN, and InN and their alloys is reviewed including exciting recent results. Attention is paid to the crystal growth techniques, structural, optical, and electrical properties of GaN, AlN, InN, and their alloys. The various theoretical results for each material are summarized. We also describe the performance of several device structures which have been demonstrated in these materials. Near‐term goals and critical areas in need of further research in the III–V nitride material system are identified.

GaN, AlN, and InN: A review

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The p...

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Luminescence properties of defects in GaN

Preface 1 General Properties of ZnO 1.1 Crystal Structure 1.2 Lattice Parameters 1.3 Electronic Band Structure 1.4 Mechanical Properties 1.5 Vibrational Properties 1.6 Thermal Properties 1.7 Electrical Properties of Undoped ZnO 2 ZnO Growth 2.1 Bulk Growth 2.2 Substrates 2.3 Epitaxial Growth Techniques 3 Optical Properties 3.1 Optical Processes in Semiconductors 3.2 Optical Transitions in ZnO 3.3 Defects in ZnO 3.4 Refractive Index of ZnO and MgZnO 3.5 Stimulated Emission in ZnO 3.6 Recombination Dynamics in ZnO 3.7 Nonlinear Optical Properties 4 Doping of ZnO 4.1 n-Type Doping 4.2 p-Type Doping 5 ZnO-Based Dilute Magnetic Semiconductors 5.1 Doping with Transition Metals 5.2 General Remarks about Dilute Magnetic Semiconductors 5.3 Classification of Magnetic Materials 5.4 A Brief Theory of Magnetization 5.5 Dilute Magnetic Semiconductor Theoretical Aspects 5.6 Measurements Techniques for Identification of Ferromagnetism 5.7 Magnetic Interactions in DMS 5.8 Theoretical Studies on ZnO-Based Magnetic Semiconductors 5.9 Experimental Results on ZnO-Based Dilute Magnetic Semiconductors 6 Bandgap Engineering 6.1 MgxZn1-xO Alloy 6.2 BexZn1-xO Alloy 6.3 CdyZn1-yO Alloy 7 ZnO Nanostructures 7.1 Synthesis of ZnO Nanostructures 7.2 Applications of ZnO Nanostructures 8 Processing, Devices, and Heterostructures 8.1 A Primer to Semiconductor-Metal Contacts 8.2 Ohmic Contacts to ZnO 8.3 Schottky Contacts to ZnO 8.4 Etching of ZnO 8.5 Heterostructure Devices 8.6 Piezoelectric Devices 8.7 Sensors and Solar Cells Based on ZnO Nanostructures 8.8 Concluding Remarks

Hadis Morkoç

Papers

A comprehensive review of zno materials and devices

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

GaN, AlN, and InN: A review

Luminescence properties of defects in GaN

Zinc Oxide: Fundamentals, Materials and Device Technology