Patent
Process and mask for ion beam etching of fine patterns
TLDR
In this paper, the authors describe a process for ion beam etching fine patterns in a substrate using a protected resist mask which prevents erosion of the mask and provides improved pattern definition for the etched region.Abstract:
The specification describes a process for ion beam etching fine patterns in a substrate using a protected resist mask which prevents erosion of the mask. First, a resist pattern is formed on the surface of a substrate to expose pre-selected areas of the substrate. Next, a selected material is deposited on the resist mask at a predetermined controlled angle of incidence with respect to the surface of the mask to form a relatively thin protective layer on the resist mask, having edges and patterns replicated from the edges and patterns of the resist mask and a negligible amount of the selected material deposited on the exposed substrate. Then, a beam of ions at a chosen energy is directed through openings in the protected mask to the substrate to etch the pre-selected areas. During etching, the protective layer on the resist prevents erosion of the resist mask and provides improved pattern definition for the etched region. In a preferred embodiment, metal contacts to the etched regions are subsequently formed by depositing a selected metal from a directional source and then lifting off the resist and the undesired metal.read more
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Patent
Plasma enhancement apparatus and method for physical vapor deposition
Paul E. Sathrum,Bernard F. Coll +1 more
TL;DR: In this paper, a plasma enhancement method and apparatus for electric arc vapor deposition is presented, which is positioned to act upon plasma generated from a plasma source before the plasma reaches a substrate to be coated by the plasma.
Patent
Method of making gas permeable membranes for amperometric gas electrodes
TL;DR: In this paper, a method of manufacturing a gas-permeable membrane for an amperometric gas electrode comprising demetallizing areas of a metallized film to obtain a regular array of gas permeable micropores was presented.
Patent
Lead frame fabricating method and lead frame fabricating apparatus
TL;DR: In this article, a lead frame fabrication method and a fabrication apparatus are provided which can easily fabricate lead frames of fine pattern at a high speed, can improve dimensional accuracy and quality of the lead frames after the fabrication, and can realize mass-production at a lower cost.
Patent
Method of forming a resist mask resistant to plasma etching
Joseph Meyer,David John Vinton +1 more
TL;DR: In this paper, a mask which is resistant to a plasma etching treatment is formed by providing an etch resistant skin over a lithographically patterned radiation sensitive resist film present on a substrate.
Patent
High-selectivity plasma-assisted etching of resist- masked layer
TL;DR: In this paper, a very thin resist layers can be utilized in the fabrication process and very high-resolution patterning for VLSI devices is thereby made feasible, which can be used for very high resolution patterning.
References
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Patent
Method for forming patterned films utilizing a transparent lift-off mask
TL;DR: A lift-off method for use in depositing thin films in the fabrication of integrated circuits which avoids edge tearing of the films is described in this article. But this method is not suitable for the case where the substrate is a polydimethylsiloxane resin material.
Patent
Integrated fabrication method of forming connectors through insulative layers
TL;DR: In this paper, a method for forming metallic connectors through a layer of electrically insulative material is described. But the method is not suitable for the fabrication of complex circuits, as it requires a large number of exposed portions of the insulative layer to be removed by etching to form openings through which the underlying substrate is exposed.
Patent
Recessed metallurgy for dielectric substrates
Walter W. Koste,Ernest N. Urfer +1 more
TL;DR: In this article, a thin organic mask is removed by peeling subsequent to the metal paste deposition step, and the resulting channels and via holes are then filled with a metal paste.
Patent
Means and method for inducing uniform parallel alignment of liquid crystal material in a liquid crystal cell
TL;DR: In this paper, a beam of neutralized argon ions is incident at a grazing angle to the surface, typically 20°, resulting in a microscopic condition believed to comprise a "corrugated" surface with "ridges" and "valleys" parallel to the direction of the incident beam.
Patent
Alignment film for a liquid crystal display cell
TL;DR: In this paper, a method of aligning liquid crystal molecules in a selected direction in a liquid crystal display cell is described, where an alignment film whose film growth is oriented in the same direction is deposited on an electrode film of a LCA.