Patent
Semiconductor device and manufacturing method thereof
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TLDR
In this article, a semiconductor device with a structure wherein fluctuation in thickness does not occur, even in the case that a dielectric film of low coverage is used, is presented.Abstract:
A semiconductor device with capacitors which have a structure wherein fluctuation in thickness does not occur, even in the case that a dielectric film of low coverage is used. The semiconductor device is provided with adjoining first and second capacitors, wherein the respective capacitor is provided with lower electrode, dielectric film which contacts the top surface of the lower electrode and which has peripheral sidewall surfaces that continue to the peripheral sidewall surfaces of the lower electrode, first upper electrode that contacts the top surface of the dielectric film and a second upper electrode that contacts the top surface of the first upper electrode and the semiconductor device is further provided with a partition insulating film which covers the sidewall surfaces of lower electrode and the dielectric layer between the capacitors so that the second upper electrode contacts the top surface of the partition insulating film.read more
Citations
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References
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Patent
Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug
Paul J. Schuele,Pierre C. Fazan +1 more
TL;DR: In this article, a process for forming an effective titanium nitride barrier layer between the upper surface of a polysilicon plug formed in a thick dielectric layer and a platinum lower capacitor plate in a dynamic random access memory which is being fabricated on a silicon wafer is described.
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