Journal ArticleDOI
Semiconductor Devices for Optical Communications
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In this paper, the authors presented the Semiconductor Devices for Optical Communications (SDE) for optical communications, which is a family of semiconductor devices designed for optical communication.Abstract:
(1980). Semiconductor Devices for Optical Communications. Optica Acta: International Journal of Optics: Vol. 27, No. 10, pp. 1398-1399.read more
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Journal ArticleDOI
Optical interconnections for VLSI systems
TL;DR: The combination of decreasing feature sizes and increasing chip sizes is leading to a communication crisis in the area of VLSI circuits and systems, and the possibility of applying optical and electrooptical technologies to such interconnection problems is investigated.
Journal ArticleDOI
Impact of double Rayleigh backscatter noise on digital and analog fiber systems
P. Wan,J. Conradi +1 more
TL;DR: In this article, the authors derived an exact analytical expression for the noise power spectral density due to double Rayleigh backscattering in standard single mode fiber-optic transmission systems in terms of the autocorrelation function of the transmitted optical electric field.
Journal ArticleDOI
Heterojunction phototransistors for long‐wavelength optical receivers
Joe C. Campbell,K. Ogawa +1 more
TL;DR: In this article, the InP/InGaAs heterojunction phototransistors are shown to be promising photodetectors for long-wavelength optical receivers, and the gain characteristics of these devices were shown to reflect the benefit of a wide bandgap emitter as well as the effects of recombination centers near the base-emitter heter junction.
Journal ArticleDOI
High power laser diode driver based on power converter technology
M.T. Thompson,M.F. Schlecht +1 more
TL;DR: In this article, the design of a high speed semiconductor laser diode driver designed for driving 500 mW to 1.5 W diodes at full optical power modulation up to frequencies of 10 MHz was described.
Journal ArticleDOI
Small-area high-speed InP/InGaAs phototransistor
Abstract: We describe the fabrication and characteristics of a small‐area (diameter ≃20 μm) InP/InGaAs heterojunction phototransistor, a promising photodetector/preamplifier for long‐wavelength optical receivers. The high sensitivity (hfe ≃100 at 20‐nW incident power) and small junction capacitance (≲0.2 pF) of the device combine to produce a gain‐bandwidth product in excess of 1.7 GHz.