Patent
Theobromine with anticancer activity
TLDR
Theobromine with anti-carcinogenic activity which inhibits the suppression of GJIC (gap junctional intercellular communication), a pathological phenomenon occurring during development of various kinds of cancers including liver cancer, as well as DNA synthesis of cancer cells thereby inhibiting proliferation of liver, gastric and colon cancer cells as discussed by the authors.Abstract:
Disclosed is theobromine with an anti-carcinogenic activity which inhibits the suppression of GJIC (gap junctional intercellular communication), a pathological phenomenon occurring during development of various kinds of cancers including liver cancer, as well as DNA synthesis of cancer cells thereby inhibiting proliferation of liver, gastric and colon cancer cells.read more
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Patent
Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate
Akihiro c,o Itami Works o. Sumitomo E. Hachigo,Takayuki c,o Itami Works o. Sumitomo E. Nishiura +3 more
TL;DR: In this paper, a cleaning method and production method that suppresses the adhesion of foreign matters including impurity, fine particles and the like on a surface of a compound semiconductor is provided.
Patent
System and its method for high efficiency ozone water cleaning semiconductor wafer
TL;DR: In this paper, a system and a method for washing semiconductor wafer with high efficient ozone water was proposed, which mainly utilizes superpure water and gaseous phase ozone to carry out gas-liquid resolution and combination, concentration dynamic analysis and information feed-control containing the production of high density large flow liquid-phase ozone water for cleaning the solution, wafer, dynamic monitor to the density of ozone and additives in the solution and water temperature and analysis and feeding to the monitor values.
Patent
Method for cleaning polycrystalline silicon
TL;DR: In this article, the embodiment of the invention discloses a method for cleaning polycrystalline silicon, which comprises the following steps: putting poly-stalline polysilicon in SC-1 cleanout fluid so as to carry out first cleaning on the poly-polysilicon by using pure water; carrying out first drying treatment on poly-plastic polysilicons by using ozone; putting the polypolysilicons in a mixed solution of nitric acids and hydrofluoric acids; and carrying out second rinsing on polypolysimicon polycillians by using
Patent
Method for forming oxide layer on surface of silicon wafer
Hao Chen,Bin Zhang,Feng Zhang +2 more
TL;DR: In this article, a method for forming an oxide layer on the surface of silicon wafer comprises the following steps: (a) washing the polysilicon wafer to be detected with hydrofluoric acid solution with the mass concentration of 15% to 17%, wherein the washing lasted 20-40s; (b) rinsing the silicon wafers with deionized water, and (c) drying the polysemic wafer with nitrogen gas, at the temperature of 70-90 DEG C, where the washing lasts 60-100s.
Patent
Indium phosphide wafer and surface cleaning method thereof
TL;DR: In this paper, a method for cleaning an indium phosphide wafer was proposed, wherein the method comprises the following steps: (1) processing a wafer at minus 10-25 DEG C by use of an ammonia solution containing H2O2; (2) cleaning the wafer with deionized water; (3) processing the wafers at plus 10-55 DEGC by using of a concentrated acid; (4) cleaning wofers with deionsized water, and (5) processing wafters at minus10-35
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