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Journal ArticleDOI

Thermionic Emission, Field Emission, and the Transition Region

E. L. Murphy, +1 more
- 15 Jun 1956 - 
- Vol. 102, Iss: 6, pp 1464-1473
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TLDR
In this paper, a general expression for the emitted current as a function of field, temperature, and work function is set up in the form of a definite integral, and each type of emission is associated with a technique for approximating the integral and with a characteristic dependence on the three parameters.
Abstract
Although the theories of thermionic and field emission of electrons from metals are very well understood, the two types of emission have usually been studied separately by first specifying the range of temperature and field and then constructing the appropriate expression for the current. In this paper the emission is treated from a unified point of view in order to establish the ranges of temperature and field for the two types of emission and to investigate the current in the region intermediate between thermionic and field emission. A general expression for the emitted current as a function of field, temperature, and work function is set up in the form of a definite integral. Each type of emission is then associated with a technique for approximating the integral and with a characteristic dependence on the three parameters. An approximation for low fields and high temperatures leads to an extension of the Richardson-Schottky formula for thermionic emission. The values of temperature and field for which it applies are established by considering the validity of the approximation. An analogous treatment of the integral, for high fields and low temperatures, gives an extension of the Fowler-Nordheim formula for field emission, and establishes the region of temperature and field in which it applies. Also another approximate method for evaluating the integral is given which leads to a new type of dependence of the emitted current on temperature and field and which applies in a narrow region of temperature and field intermediate between the field and thermionic emission regions.

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Journal ArticleDOI

Photoresponse of gated p-silicon field emitter array and correlation with theoretical models

TL;DR: In this paper, the authors showed that the transition between the tunneling-limited field-emission regime and the supply-limited saturation regime is clearly revealed in current-voltage plots.
Journal ArticleDOI

Importance of high local cathode spot pressure on the attachment of thermal arcs on cold cathodes

TL;DR: The importance of having high local cathode spot pressures for the self-sustaining operation of a thermal arc plasma on a cold cathode is theoretically investigated in this article, where the authors apply a cathode sheath model to a Cu cathode, and show that cathode spots plasma pressures ranging 7.4-9.2 atm and 34.2-50 atm for electron temperatures of /spl sim/1 eV are needed to account for current densities of 10/sup 9/ and 10/Sup 10/A/spl middot/
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Comments on the continuing widespread and unnecessary use of a defective emission equation in field emission related literature

TL;DR: In this paper, the authors present a summary of relevant aspects of field electron emission theory, by explicitly identifying the misjudgment in the original 1928 Fowler-Nordheim paper, and by calculating the size of the resulting error, and showing in detail why most FE theoreticians regard the 1950s modifications as better physics.
Journal ArticleDOI

A Calcium Aluminate Electride Hollow Cathode

TL;DR: In this paper, the development and testing of a C12A7 electride hollow cathode was discussed, which is a crystalline ceramic in which electrons clathrated in subnanometer sized cages act as a conductive medium.
Journal ArticleDOI

Differential resistance peaks of Schottky barrier diodes

TL;DR: In this paper, the conditions for the differential resistance of metal-semiconductor Schottky barrier rectifiers peaks in the forward direction were analyzed and the occurrence of sharp peaks (p -type GaAs, n - and p -type Ge and Si) arising from a discontinuity in the second order derivative at voltages corresponding to the semiconductor Fermi energy or flat maxima at lower voltages was predicted.
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