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Three-Dimensional Mixed Convection in a Horizontal Chemical Vapor Deposition Reactor
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In this article, the authors present an analysis of mixed convection in an idealized cold-wall horizontal chemical vapor deposition (CVD) reactor with a tapered susceptor, based on the full three-dimensional elliptic form of the conservation equations.Abstract:
We present an analysis of mixed convection in an idealized cold-wall horizontal chemical vapor deposition (CVD) reactor with a tapered susceptor. The analysis is based on the full three-dimensional elliptic form of the conservation equations. The predictions of fluid flow and heat transfer are made by solving the conservation equations for a single species and the details of chemistry and species transport are not included. Thus, the results are valid for CVD applications in which the reactants are present in very small concentrations in the inert carrier gasread more
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Revue bibliographique sur les écoulements de Poiseuille–Rayleigh–Bénard : écoulements de convection mixte en conduites rectangulaires horizontales chauffées par le bas
TL;DR: An exhaustive bibliographical review on the Poiseuille-Rayleigh-Benard (PRB) flows, the mixed convection flows in horizontal rectangular ducts uniformly heated from below, is presented in this paper.
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Fluid Flow Phenomena in Materials Processing—The 2000 Freeman Scholar Lecture
TL;DR: A review of fluid flow phenomena underlying a wide variety of materials processing operations such as optical fiber manufacture, crystal growth for semiconductor fabrication, casting, thin film manufacture, and polymer processing can be found in this paper.
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Application of a CFD tool in designing a fountain plating cell for uniform bump plating of semiconductor wafers
TL;DR: In this article, an improvement on fountain-style plating cells has been developed for better control of deposit uniformity during bump plating operations, where a computational fluid dynamics (CFD) tool is applied to analyze the flow motion inside the fountain plating cell, a favorable plating solution flow path, is created so that uniform flow will reach the wafer surface.
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Parametric Modeling and Optimization of Chemical Vapor Deposition Process
TL;DR: In this article, the parametric modeling and optimization of the Chemical Vapor Deposition (CVD) process for the deposition of thin films of silicon from silane in a vertical impinging CVD reactor are studied.
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Numerical investigations of geometric effects on flow and thermal fields in a horizontal CVD reactor
Tsarng Sheng Cheng,M.C. Hsiao +1 more
TL;DR: In this paper, the effects of the tilted angle of the susceptor and the upper wall and the addition of a rib on the 3D flow structures and heat transfer characteristics in a model horizontal chemical vapor deposition (CVD) reactor with a circular heated disk which simulates a 12-in wafer were investigated.