Patent
Transfer gate-less photosensor configuration
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TLDR
In this paper, the charge generated in semiconductor material by incident radiation is transferred to an adjacent region of the semiconductor materials by lowering the potential on the adjacent region relative to the potential in the region where the charge was initially generated.Abstract:
The charge generated in semiconductor material by incident radiation is transferred to an adjacent region of the semiconductor material by lowering the potential on the adjacent region of semiconductor material relative to the potential in the region where the charge was initially generated. Charge is prevented from flowing back to the region where it was generated by means of a potential barrier formed between the generation region and the adjacent region by a region of semiconductor material highly doped relative to the substrate between said adjacent region and the region in which the charge is generated.read more
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Solid-state image sensor
TL;DR: In this article, a solid-state image sensor has a plurality of unit cells, each of which comprises a substrate, an electroconductive layer formed on the substrate and having a different polarity from the polarity of the substrate, and a CCD register area for the transfer of the signal charge generated in the photoelectric conversion area.
Patent
Solid-state imaging device having a reduced image lag
TL;DR: In this article, the authors proposed a method to generate pulses with a predetermined pulse potential and apply them to the gate electrode in the charge transfer gate section to control the timing of a transfer of electric charges from the light-charge converter regions to the charge-voltage converter region.
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Buried channel CMOS imager and method of forming same
TL;DR: In this paper, a buried channel CMOS imager with improved signal-to-noise ratio (S2N) is proposed, which keeps collected charge away from the surface of the substrate, thereby improving charge loss to the substrate.
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TL;DR: In this paper, dual horizontal transfer registers are used and transfer of charge carriers between the two registers is accomplished without a separate transfer gate electrode, where transfer regions are disposed between alternate storage regions of the registers such that charge carriers in one-half of the storage regions in one register can be transferred to the other register.
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Interline transfer ccd image sensing device with electrode structure for each pixel
TL;DR: In this article, a simplified CCD with simplified structure and hence improved manufacturability is described, which utilizes ion implanted barrier regions, which may be self-aligned such as described by Losee et al. U.S. Pat. No. 4,613,402.
References
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Patent
Charge coupled optical scanner
TL;DR: In this paper, an improved optical scanner includes a semiconductor charge coupled shift register, where an overflow reservoir is operably coupled to respective bits of the shift register in accordance with one aspect of the invention to receive electrical charge which is in excess of the storage capability associated with each bit to prevent "''"blooming''.
Patent
Method of forming self-aligned field effect transistor and charge-coupled device
TL;DR: In this article, a self-aligned field effect transistor and a charge-coupled array are formed by depositing both polysilicon and silicon nitride layers over a silicon dioxide layer on the surface of a silicon body.
Patent
Charge coupled imaging device with separate sensing and shift-out arrays
TL;DR: In this paper, a method and apparatus for moving selected electrical charges along the surface-adjacent portions of a semiconductor substrate is described, where electrical charges representative of analog or digital information are selectively introduced or removed from the potential wells by a single column-associated transfer means.