Journal ArticleDOI
Waveguide-integrated near-infrared detector with self-assembled metal silicide nanoparticles embedded in a silicon p-n junction
TLDR
In this article, an all-silicon photodetector integrated in a silicon-on-insulator waveguide for the telecom regime is proposed, based on internal photoemission from electrically floating metal silicide nanoparticles (NPs) embedded in the space charge region of a Si p-n junction.Abstract:
An all-silicon photodetector integrated in a silicon-on-insulator waveguide for the telecom regime is proposed. The device is based on internal photoemission from electrically floating metal silicide nanoparticles (NPs) embedded in the space charge region of a Si p-n junction. Numerical simulation indicates that the light absorption could be enhanced if localized surface plasmon resonances are excited on the metal silicide nanoparticles, thus enabling to shrink the detector’s footprint to a submicron scale. A proof-of-concept detector fabricated using standard silicon complementary metal-oxide-semiconductor technology exhibits a peak responsivity of ∼30 mA/W at 5-V reverse bias and a 3-dB bandwidth of ∼6 GHz. It is expected that the overall performance would be significantly improved by optimization of both the detector’s configuration and the fabrication parameters.read more
Citations
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Journal ArticleDOI
Embedding Plasmonic Nanostructure Diodes Enhances Hot Electron Emission
Mark W. Knight,Yumin Wang,Alexander S. Urban,Ali Sobhani,Bob Zheng,Peter Nordlander,Naomi J. Halas +6 more
TL;DR: It is shown that embedding plasmonic structures into the semiconductor substantially increases hot electron emission, and Responsivities increase by 25× over planar diodes for embedding depths as small as 5 nm.
Journal ArticleDOI
On-Chip Integrated, Silicon–Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain
Ilya Goykhman,U. Sassi,Boris Desiatov,Noa Mazurski,Silvia Milana,Domenico De Fazio,Anna Eiden,Jacob B. Khurgin,Joseph Shappir,Uriel Levy,Andrea C. Ferrari +10 more
TL;DR: An on-chip integrated metal graphene–silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency is reported, paving the way to graphene integrated silicon photonics.
Journal ArticleDOI
Surface plasmon photodetectors and their applications
TL;DR: A survey of surface plasmon photodetectors can be found in this paper, where surface plasmons are used for low-noise high-speed detection, single-plasmon detection, near and mid-infrared imaging, photovoltaic solar energy conversion, and (bio)chemical sensing.
Journal ArticleDOI
Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band
TL;DR: The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.
Journal ArticleDOI
Plasmonic enhanced silicon pyramids for internal photoemission Schottky detectors in the near-infrared regime
TL;DR: In this article, the authors demonstrate a nanoscale broadband silicon plasmonic Schottky detector with high responsivity and improved signal to noise ratio operating in the sub-bandgap regime.
References
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Journal ArticleDOI
Nanoplasmonics: past, present, and glimpse into future
TL;DR: Fundamental theoretical ideas in nanoplasmonics are reviewed and selected experimental developments are reviewed, including fundamentals, nanolocalization of optical energy and hot spots, ultrafast nanoplAsmonics and control of the spatiotemporal Nanolocalized fields.
Journal ArticleDOI
Thin-Film Schottky Barrier Photodetector Models
Christine Scales,Pierre Berini +1 more
TL;DR: In this article, a model for the internal quantum efficiency of Schottky barrier photodetectors suitable for the detection of optical radiation below the bandgap energy of the semiconductor is presented.
Journal ArticleDOI
Near-infrared sub-bandgap all-silicon photodetectors: State of the art and perspectives
TL;DR: A review of the state of the art silicon photodetectors based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.
Journal ArticleDOI
Near-infrared waveguide-based nickel silicide Schottky-barrier photodetector for optical communications
TL;DR: In this article, SiSi2∕p-Si detectors with tapered geometry demonstrate dark current of ∼3.0nA at room temperature, responsivity of ∼4.6mA∕W at wavelengths ranging from 1520to1620nm and 3dB bandwidth of ∼2.0GHz.
Journal ArticleDOI
Surface-plasmon Schottky contact detector based on a symmetric metal stripe in silicon
TL;DR: A Schottky contact detector comprising a symmetric metal stripe buried in Si, capable of detecting surface plasmons at wavelengths below the bandgap of Si, is described and its performance is assessed at lambda(0)=1550 nm assuming a CoSi(2) stripe in p-type Si.