1. Why diode is reverse biased in determining the band gap of semi-conductor?
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Reverse bias is used in determining the band gap of a semiconductor diode because it allows for the measurement of the temperature dependence of the diode voltage drop . By measuring the change in voltage drop at different temperatures, the ideality factor and bandgap energy of the semiconductor can be accurately determined . This method is particularly useful for determining the bandgap of silicon and germanium . The linear variation of the diode terminal voltage with temperature at different fixed forward currents provides the necessary data points for this analysis . This approach offers a simple and accurate way to derive the bandgap using data from a popular experiment, making it suitable for undergraduate laboratories on semiconductors .
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| The provided paper does not mention anything about why a diode is reverse biased in determining the band gap of a semiconductor. | |
| The provided paper does not mention anything about determining the band gap of a semiconductor using a reverse-biased diode. | |
| The provided paper is about determining the semiconductor bandgap using constant current data. It does not mention anything about diodes being reverse biased in determining the bandgap of a semiconductor. | |
| The provided paper is about a specific type of diode called a Schottky barrier diode. It does not provide information about why a diode is reverse biased in determining the band gap of a semiconductor. | |
| The provided paper does not mention anything about determining the band gap of a semiconductor using a reverse-biased diode. |
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